Heterojunction oxide thin-film transistors with unprecedented electron mobility grown from solution

Thin-film transistors made of solution-processed metal oxide semiconductors hold great promise for application in the emerging sector of large-area electronics. However, further advancement of the technology is hindered by limitations associated with the extrinsic electron transport properties of th...

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Detalles Bibliográficos
Autores principales: Faber, Hendrik, Das, Satyajit, Lin, Yen-Hung, Pliatsikas, Nikos, Zhao, Kui, Kehagias, Thomas, Dimitrakopulos, George, Amassian, Aram, Patsalas, Panos A., Anthopoulos, Thomas D.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Association for the Advancement of Science 2017
Materias:
Research Articles
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5375640/
https://www.ncbi.nlm.nih.gov/pubmed/28435867
http://dx.doi.org/10.1126/sciadv.1602640

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5375640/
https://www.ncbi.nlm.nih.gov/pubmed/28435867
http://dx.doi.org/10.1126/sciadv.1602640

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