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Monolayer optical memory cells based on artificial trap-mediated charge storage and release

Monolayer transition metal dichalcogenides are considered to be promising candidates for flexible and transparent optoelectronics applications due to their direct bandgap and strong light-matter interactions. Although several monolayer-based photodetectors have been demonstrated, single-layered opti...

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Autores principales: Lee, Juwon, Pak, Sangyeon, Lee, Young-Woo, Cho, Yuljae, Hong, John, Giraud, Paul, Shin, Hyeon Suk, Morris, Stephen M., Sohn, Jung Inn, Cha, SeungNam, Kim, Jong Min
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2017
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5376667/
https://www.ncbi.nlm.nih.gov/pubmed/28337979
http://dx.doi.org/10.1038/ncomms14734
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author Lee, Juwon
Pak, Sangyeon
Lee, Young-Woo
Cho, Yuljae
Hong, John
Giraud, Paul
Shin, Hyeon Suk
Morris, Stephen M.
Sohn, Jung Inn
Cha, SeungNam
Kim, Jong Min
author_facet Lee, Juwon
Pak, Sangyeon
Lee, Young-Woo
Cho, Yuljae
Hong, John
Giraud, Paul
Shin, Hyeon Suk
Morris, Stephen M.
Sohn, Jung Inn
Cha, SeungNam
Kim, Jong Min
author_sort Lee, Juwon
collection PubMed
description Monolayer transition metal dichalcogenides are considered to be promising candidates for flexible and transparent optoelectronics applications due to their direct bandgap and strong light-matter interactions. Although several monolayer-based photodetectors have been demonstrated, single-layered optical memory devices suitable for high-quality image sensing have received little attention. Here we report a concept for monolayer MoS(2) optoelectronic memory devices using artificially-structured charge trap layers through the functionalization of the monolayer/dielectric interfaces, leading to localized electronic states that serve as a basis for electrically-induced charge trapping and optically-mediated charge release. Our devices exhibit excellent photo-responsive memory characteristics with a large linear dynamic range of ∼4,700 (73.4 dB) coupled with a low OFF-state current (<4 pA), and a long storage lifetime of over 10(4) s. In addition, the multi-level detection of up to 8 optical states is successfully demonstrated. These results represent a significant step toward the development of future monolayer optoelectronic memory devices.
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spelling pubmed-53766672017-04-17 Monolayer optical memory cells based on artificial trap-mediated charge storage and release Lee, Juwon Pak, Sangyeon Lee, Young-Woo Cho, Yuljae Hong, John Giraud, Paul Shin, Hyeon Suk Morris, Stephen M. Sohn, Jung Inn Cha, SeungNam Kim, Jong Min Nat Commun Article Monolayer transition metal dichalcogenides are considered to be promising candidates for flexible and transparent optoelectronics applications due to their direct bandgap and strong light-matter interactions. Although several monolayer-based photodetectors have been demonstrated, single-layered optical memory devices suitable for high-quality image sensing have received little attention. Here we report a concept for monolayer MoS(2) optoelectronic memory devices using artificially-structured charge trap layers through the functionalization of the monolayer/dielectric interfaces, leading to localized electronic states that serve as a basis for electrically-induced charge trapping and optically-mediated charge release. Our devices exhibit excellent photo-responsive memory characteristics with a large linear dynamic range of ∼4,700 (73.4 dB) coupled with a low OFF-state current (<4 pA), and a long storage lifetime of over 10(4) s. In addition, the multi-level detection of up to 8 optical states is successfully demonstrated. These results represent a significant step toward the development of future monolayer optoelectronic memory devices. Nature Publishing Group 2017-03-24 /pmc/articles/PMC5376667/ /pubmed/28337979 http://dx.doi.org/10.1038/ncomms14734 Text en Copyright © 2017, The Author(s) http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article's Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
spellingShingle Article
Lee, Juwon
Pak, Sangyeon
Lee, Young-Woo
Cho, Yuljae
Hong, John
Giraud, Paul
Shin, Hyeon Suk
Morris, Stephen M.
Sohn, Jung Inn
Cha, SeungNam
Kim, Jong Min
Monolayer optical memory cells based on artificial trap-mediated charge storage and release
title Monolayer optical memory cells based on artificial trap-mediated charge storage and release
title_full Monolayer optical memory cells based on artificial trap-mediated charge storage and release
title_fullStr Monolayer optical memory cells based on artificial trap-mediated charge storage and release
title_full_unstemmed Monolayer optical memory cells based on artificial trap-mediated charge storage and release
title_short Monolayer optical memory cells based on artificial trap-mediated charge storage and release
title_sort monolayer optical memory cells based on artificial trap-mediated charge storage and release
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5376667/
https://www.ncbi.nlm.nih.gov/pubmed/28337979
http://dx.doi.org/10.1038/ncomms14734
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