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Promotion of acceptor formation in SnO(2) nanowires by e-beam bombardment and impacts to sensor application

We have realized a p-type-like conduction in initially n-type SnO(2) nanowires grown using a vapor-liquid-solid method. The transition was achieved by irradiating n-type SnO(2) nanowires with a high-energy electron beam, without intentional chemical doping. The nanowires were irradiated at doses of...

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Autores principales: Sub Kim, Sang, Gil Na, Han, Woo Kim, Hyoun, Kulish, Vadym, Wu, Ping
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5377233/
https://www.ncbi.nlm.nih.gov/pubmed/26030815
http://dx.doi.org/10.1038/srep10723
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author Sub Kim, Sang
Gil Na, Han
Woo Kim, Hyoun
Kulish, Vadym
Wu, Ping
author_facet Sub Kim, Sang
Gil Na, Han
Woo Kim, Hyoun
Kulish, Vadym
Wu, Ping
author_sort Sub Kim, Sang
collection PubMed
description We have realized a p-type-like conduction in initially n-type SnO(2) nanowires grown using a vapor-liquid-solid method. The transition was achieved by irradiating n-type SnO(2) nanowires with a high-energy electron beam, without intentional chemical doping. The nanowires were irradiated at doses of 50 and 150 kGy, and were then used to fabricate NO(2) gas sensors, which exhibited n-type and p-type conductivities, respectively. The tuneability of the conduction behavior is assumed to be governed by the formation of tin vacancies (under high-energy electron beam irradiation), because it is the only possible acceptor, excluding all possible defects via density functional theory (DFT) calculations. The effect of external electric fields on the defect stability was studied using DFT calculations. The measured NO(2) sensing dynamics, including response and recovery times, were well represented by the electron-hole compensation mechanism from standard electron-hole gas equilibrium statistics. This study elucidates the charge-transport characteristics of bipolar semiconductors that underlie surface chemical reactions. The principles derived will guide the development of future SnO(2)-based electronic and electrochemical devices.
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spelling pubmed-53772332017-04-07 Promotion of acceptor formation in SnO(2) nanowires by e-beam bombardment and impacts to sensor application Sub Kim, Sang Gil Na, Han Woo Kim, Hyoun Kulish, Vadym Wu, Ping Sci Rep Article We have realized a p-type-like conduction in initially n-type SnO(2) nanowires grown using a vapor-liquid-solid method. The transition was achieved by irradiating n-type SnO(2) nanowires with a high-energy electron beam, without intentional chemical doping. The nanowires were irradiated at doses of 50 and 150 kGy, and were then used to fabricate NO(2) gas sensors, which exhibited n-type and p-type conductivities, respectively. The tuneability of the conduction behavior is assumed to be governed by the formation of tin vacancies (under high-energy electron beam irradiation), because it is the only possible acceptor, excluding all possible defects via density functional theory (DFT) calculations. The effect of external electric fields on the defect stability was studied using DFT calculations. The measured NO(2) sensing dynamics, including response and recovery times, were well represented by the electron-hole compensation mechanism from standard electron-hole gas equilibrium statistics. This study elucidates the charge-transport characteristics of bipolar semiconductors that underlie surface chemical reactions. The principles derived will guide the development of future SnO(2)-based electronic and electrochemical devices. Nature Publishing Group 2015-06-01 /pmc/articles/PMC5377233/ /pubmed/26030815 http://dx.doi.org/10.1038/srep10723 Text en Copyright © 2015, Macmillan Publishers Limited http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
spellingShingle Article
Sub Kim, Sang
Gil Na, Han
Woo Kim, Hyoun
Kulish, Vadym
Wu, Ping
Promotion of acceptor formation in SnO(2) nanowires by e-beam bombardment and impacts to sensor application
title Promotion of acceptor formation in SnO(2) nanowires by e-beam bombardment and impacts to sensor application
title_full Promotion of acceptor formation in SnO(2) nanowires by e-beam bombardment and impacts to sensor application
title_fullStr Promotion of acceptor formation in SnO(2) nanowires by e-beam bombardment and impacts to sensor application
title_full_unstemmed Promotion of acceptor formation in SnO(2) nanowires by e-beam bombardment and impacts to sensor application
title_short Promotion of acceptor formation in SnO(2) nanowires by e-beam bombardment and impacts to sensor application
title_sort promotion of acceptor formation in sno(2) nanowires by e-beam bombardment and impacts to sensor application
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5377233/
https://www.ncbi.nlm.nih.gov/pubmed/26030815
http://dx.doi.org/10.1038/srep10723
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