Chemical and Bandgap Engineering in Monolayer Hexagonal Boron Nitride

Monolayer hexagonal boron nitride (h-BN) possesses a wide bandgap of ~6 eV. Trimming down the bandgap is technically attractive, yet poses remarkable challenges in chemistry. One strategy is to topological reform the h-BN’s hexagonal structure, which involves defects or grain boundaries (GBs) engine...

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Detalles Bibliográficos
Autores principales: Ba, Kun, Jiang, Wei, Cheng, Jingxin, Bao, Jingxian, Xuan, Ningning, Sun, Yangye, Liu, Bing, Xie, Aozhen, Wu, Shiwei, Sun, Zhengzong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5377335/
https://www.ncbi.nlm.nih.gov/pubmed/28367992
http://dx.doi.org/10.1038/srep45584

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5377335/
https://www.ncbi.nlm.nih.gov/pubmed/28367992
http://dx.doi.org/10.1038/srep45584

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