Carbon related defects in irradiated silicon revisited

Electronic structure calculations employing hybrid functionals are used to gain insight into the interaction of carbon (C) atoms, oxygen (O) interstitials, and self-interstitials in silicon (Si). We calculate the formation energies of the C related defects C(i)(Si(I)), C(i)O(i), C(i)C(s), and C(i)O(...

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Detalles Bibliográficos
Autores principales: Wang, H., Chroneos, A., Londos, C. A., Sgourou, E. N., Schwingenschlögl, U.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2014
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5381337/
https://www.ncbi.nlm.nih.gov/pubmed/24809804
http://dx.doi.org/10.1038/srep04909

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5381337/
https://www.ncbi.nlm.nih.gov/pubmed/24809804
http://dx.doi.org/10.1038/srep04909

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