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Dislocation-pipe diffusion in nitride superlattices observed in direct atomic resolution
Device failure from diffusion short circuits in microelectronic components occurs via thermally induced migration of atoms along high-diffusivity paths: dislocations, grain boundaries, and free surfaces. Even well-annealed single-grain metallic films contain dislocation densities of about 10(14) m(−...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group
2017
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5382674/ https://www.ncbi.nlm.nih.gov/pubmed/28382949 http://dx.doi.org/10.1038/srep46092 |