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Synthesis and characterization of zinc oxide thin films for optoelectronic applications

Micro-ring structured zinc oxide (ZnO) thin films were prepared on glass substrates by spray pyrolysis and their structural, morphological, optical and electrical properties were investigated. X-ray Diffraction (XRD) analysis revealed the films’ hexagonal wurtzite phase with a preferred (002) grain...

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Autores principales: Muchuweni, E., Sathiaraj, T.S., Nyakotyo, H.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Elsevier 2017
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5384418/
https://www.ncbi.nlm.nih.gov/pubmed/28413834
http://dx.doi.org/10.1016/j.heliyon.2017.e00285
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author Muchuweni, E.
Sathiaraj, T.S.
Nyakotyo, H.
author_facet Muchuweni, E.
Sathiaraj, T.S.
Nyakotyo, H.
author_sort Muchuweni, E.
collection PubMed
description Micro-ring structured zinc oxide (ZnO) thin films were prepared on glass substrates by spray pyrolysis and their structural, morphological, optical and electrical properties were investigated. X-ray Diffraction (XRD) analysis revealed the films’ hexagonal wurtzite phase with a preferred (002) grain orientation. The mean crystallite size calculated on the basis of the Debye-Scherrer model was 24 nm and a small dislocation density of [Formula: see text] was obtained, indicating the existence of few lattice defects and good crystallinity. Scanning Electron Microscopy (SEM) micrographs revealed the film’s granular nature composed of rod-shaped and spherical nanoparticles which agglomerated to form micro-ring like film clusters on the film surface. The average transmittance in the visible region, optical band gap and Urbach energy were approximately 75–80%, 3.28 eV and 57 meV, respectively. The refractive index and extinction coefficient were determined using Swanepoel’s envelope method. Raman spectroscopy revealed the presence of small amounts of residual tensile stress and low density of defects in the ZnO thin films. This was consistent with XRD analysis. A low sheet resistivity [Formula: see text] and high figure of merit [Formula: see text] were obtained for our films indicating their suitability in optoelectronic applications.
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spelling pubmed-53844182017-04-14 Synthesis and characterization of zinc oxide thin films for optoelectronic applications Muchuweni, E. Sathiaraj, T.S. Nyakotyo, H. Heliyon Article Micro-ring structured zinc oxide (ZnO) thin films were prepared on glass substrates by spray pyrolysis and their structural, morphological, optical and electrical properties were investigated. X-ray Diffraction (XRD) analysis revealed the films’ hexagonal wurtzite phase with a preferred (002) grain orientation. The mean crystallite size calculated on the basis of the Debye-Scherrer model was 24 nm and a small dislocation density of [Formula: see text] was obtained, indicating the existence of few lattice defects and good crystallinity. Scanning Electron Microscopy (SEM) micrographs revealed the film’s granular nature composed of rod-shaped and spherical nanoparticles which agglomerated to form micro-ring like film clusters on the film surface. The average transmittance in the visible region, optical band gap and Urbach energy were approximately 75–80%, 3.28 eV and 57 meV, respectively. The refractive index and extinction coefficient were determined using Swanepoel’s envelope method. Raman spectroscopy revealed the presence of small amounts of residual tensile stress and low density of defects in the ZnO thin films. This was consistent with XRD analysis. A low sheet resistivity [Formula: see text] and high figure of merit [Formula: see text] were obtained for our films indicating their suitability in optoelectronic applications. Elsevier 2017-04-04 /pmc/articles/PMC5384418/ /pubmed/28413834 http://dx.doi.org/10.1016/j.heliyon.2017.e00285 Text en © 2017 The Authors http://creativecommons.org/licenses/by/4.0/ This is an open access article under the CC BY license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Muchuweni, E.
Sathiaraj, T.S.
Nyakotyo, H.
Synthesis and characterization of zinc oxide thin films for optoelectronic applications
title Synthesis and characterization of zinc oxide thin films for optoelectronic applications
title_full Synthesis and characterization of zinc oxide thin films for optoelectronic applications
title_fullStr Synthesis and characterization of zinc oxide thin films for optoelectronic applications
title_full_unstemmed Synthesis and characterization of zinc oxide thin films for optoelectronic applications
title_short Synthesis and characterization of zinc oxide thin films for optoelectronic applications
title_sort synthesis and characterization of zinc oxide thin films for optoelectronic applications
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5384418/
https://www.ncbi.nlm.nih.gov/pubmed/28413834
http://dx.doi.org/10.1016/j.heliyon.2017.e00285
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