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Enhanced Crystallinity of Epitaxial Graphene Grown on Hexagonal SiC Surface with Molybdenum Plate Capping

The crystallinity of epitaxial graphene (EG) grown on a Hexagonal-SiC substrate is found to be enhanced greatly by capping the substrate with a molybdenum plate (Mo-plate) during vacuum annealing. The crystallinity enhancement of EG layer grown with Mo-plate capping is confirmed by the significant c...

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Detalles Bibliográficos
Autores principales: Jin, Han Byul, Jeon, Youngeun, Jung, Sungchul, Modepalli, Vijayakumar, Kang, Hyun Suk, Lee, Byung Cheol, Ko, Jae-Hyeon, Shin, Hyung-Joon, Yoo, Jung-Woo, Kim, Sung Youb, Kwon, Soon-Yong, Eom, Daejin, Park, Kibog
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5386107/
https://www.ncbi.nlm.nih.gov/pubmed/25905989
http://dx.doi.org/10.1038/srep09615
Descripción
Sumario:The crystallinity of epitaxial graphene (EG) grown on a Hexagonal-SiC substrate is found to be enhanced greatly by capping the substrate with a molybdenum plate (Mo-plate) during vacuum annealing. The crystallinity enhancement of EG layer grown with Mo-plate capping is confirmed by the significant change of measured Raman spectra, compared to the spectra for no capping. Mo-plate capping is considered to induce heat accumulation on SiC surface by thermal radiation mirroring and raise Si partial pressure near surface by confining the sublimated Si atoms between SiC substrate and Mo-plate, which would be the essential contributors of crystallinity enhancement.