Enhanced resistive switching characteristics in Pt/BaTiO(3)/ITO structures through insertion of HfO(2):Al(2)O(3) (HAO) dielectric thin layer

An enhanced resistive switching (RS) effect is observed in Pt/BaTiO(3)(BTO)/ITO ferroelectric structures when a thin HfO(2):Al(2)O(3) (HAO) dielectric layer is inserted between Pt and BTO. The P-E hysteresis loops reveal the ferroelectric nature of both Pt/BTO/ITO and Pt/HAO/BTO/ITO structures. The...

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Autores principales: Silva, J. P. B., Faita, F. L., Kamakshi, K., Sekhar, K. C., Moreira, J. Agostinho, Almeida, A., Pereira, M., Pasa, A. A., Gomes, M. J. M.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5387719/
https://www.ncbi.nlm.nih.gov/pubmed/28397865
http://dx.doi.org/10.1038/srep46350
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author Silva, J. P. B.
Faita, F. L.
Kamakshi, K.
Sekhar, K. C.
Moreira, J. Agostinho
Almeida, A.
Pereira, M.
Pasa, A. A.
Gomes, M. J. M.
author_facet Silva, J. P. B.
Faita, F. L.
Kamakshi, K.
Sekhar, K. C.
Moreira, J. Agostinho
Almeida, A.
Pereira, M.
Pasa, A. A.
Gomes, M. J. M.
author_sort Silva, J. P. B.
collection PubMed
description An enhanced resistive switching (RS) effect is observed in Pt/BaTiO(3)(BTO)/ITO ferroelectric structures when a thin HfO(2):Al(2)O(3) (HAO) dielectric layer is inserted between Pt and BTO. The P-E hysteresis loops reveal the ferroelectric nature of both Pt/BTO/ITO and Pt/HAO/BTO/ITO structures. The relation between the RS and the polarization reversal is investigated at various temperatures in the Pt/HAO/BTO/ITO structure. It is found that the polarization reversal induces a barrier variation in the Pt/HAO/BTO interface and causes enhanced RS, which is suppressed at Curie temperature (T(c) = 140 °C). Furthermore, the Pt/HAO/BTO/ITO structures show promising endurance characteristics, with a RS ratio >10(3) after 10(9) switching cycles, that make them potential candidates for resistive switching memory devices. By combining ferroelectric and dielectric layers this work provides an efficient way for developing highly efficient ferroelectric-based RS memory devices.
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spelling pubmed-53877192017-04-12 Enhanced resistive switching characteristics in Pt/BaTiO(3)/ITO structures through insertion of HfO(2):Al(2)O(3) (HAO) dielectric thin layer Silva, J. P. B. Faita, F. L. Kamakshi, K. Sekhar, K. C. Moreira, J. Agostinho Almeida, A. Pereira, M. Pasa, A. A. Gomes, M. J. M. Sci Rep Article An enhanced resistive switching (RS) effect is observed in Pt/BaTiO(3)(BTO)/ITO ferroelectric structures when a thin HfO(2):Al(2)O(3) (HAO) dielectric layer is inserted between Pt and BTO. The P-E hysteresis loops reveal the ferroelectric nature of both Pt/BTO/ITO and Pt/HAO/BTO/ITO structures. The relation between the RS and the polarization reversal is investigated at various temperatures in the Pt/HAO/BTO/ITO structure. It is found that the polarization reversal induces a barrier variation in the Pt/HAO/BTO interface and causes enhanced RS, which is suppressed at Curie temperature (T(c) = 140 °C). Furthermore, the Pt/HAO/BTO/ITO structures show promising endurance characteristics, with a RS ratio >10(3) after 10(9) switching cycles, that make them potential candidates for resistive switching memory devices. By combining ferroelectric and dielectric layers this work provides an efficient way for developing highly efficient ferroelectric-based RS memory devices. Nature Publishing Group 2017-04-11 /pmc/articles/PMC5387719/ /pubmed/28397865 http://dx.doi.org/10.1038/srep46350 Text en Copyright © 2017, The Author(s) http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
spellingShingle Article
Silva, J. P. B.
Faita, F. L.
Kamakshi, K.
Sekhar, K. C.
Moreira, J. Agostinho
Almeida, A.
Pereira, M.
Pasa, A. A.
Gomes, M. J. M.
Enhanced resistive switching characteristics in Pt/BaTiO(3)/ITO structures through insertion of HfO(2):Al(2)O(3) (HAO) dielectric thin layer
title Enhanced resistive switching characteristics in Pt/BaTiO(3)/ITO structures through insertion of HfO(2):Al(2)O(3) (HAO) dielectric thin layer
title_full Enhanced resistive switching characteristics in Pt/BaTiO(3)/ITO structures through insertion of HfO(2):Al(2)O(3) (HAO) dielectric thin layer
title_fullStr Enhanced resistive switching characteristics in Pt/BaTiO(3)/ITO structures through insertion of HfO(2):Al(2)O(3) (HAO) dielectric thin layer
title_full_unstemmed Enhanced resistive switching characteristics in Pt/BaTiO(3)/ITO structures through insertion of HfO(2):Al(2)O(3) (HAO) dielectric thin layer
title_short Enhanced resistive switching characteristics in Pt/BaTiO(3)/ITO structures through insertion of HfO(2):Al(2)O(3) (HAO) dielectric thin layer
title_sort enhanced resistive switching characteristics in pt/batio(3)/ito structures through insertion of hfo(2):al(2)o(3) (hao) dielectric thin layer
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5387719/
https://www.ncbi.nlm.nih.gov/pubmed/28397865
http://dx.doi.org/10.1038/srep46350
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