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Enhanced resistive switching characteristics in Pt/BaTiO(3)/ITO structures through insertion of HfO(2):Al(2)O(3) (HAO) dielectric thin layer

An enhanced resistive switching (RS) effect is observed in Pt/BaTiO(3)(BTO)/ITO ferroelectric structures when a thin HfO(2):Al(2)O(3) (HAO) dielectric layer is inserted between Pt and BTO. The P-E hysteresis loops reveal the ferroelectric nature of both Pt/BTO/ITO and Pt/HAO/BTO/ITO structures. The...

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Detalles Bibliográficos
Autores principales:	Silva, J. P. B., Faita, F. L., Kamakshi, K., Sekhar, K. C., Moreira, J. Agostinho, Almeida, A., Pereira, M., Pasa, A. A., Gomes, M. J. M.
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group 2017
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5387719/ https://www.ncbi.nlm.nih.gov/pubmed/28397865 http://dx.doi.org/10.1038/srep46350

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