Cargando…

Observation of current-induced, long-lived persistent spin polarization in a topological insulator: A rechargeable spin battery

Topological insulators (TIs), with their helically spin-momentum–locked topological surface states (TSSs), are considered promising for spintronics applications. Several recent experiments in TIs have demonstrated a current-induced electronic spin polarization that may be used for all-electrical spi...

Descripción completa

Detalles Bibliográficos
Autores principales: Tian, Jifa, Hong, Seokmin, Miotkowski, Ireneusz, Datta, Supriyo, Chen, Yong P.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Association for the Advancement of Science 2017
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5392024/
https://www.ncbi.nlm.nih.gov/pubmed/28439549
http://dx.doi.org/10.1126/sciadv.1602531
Descripción
Sumario:Topological insulators (TIs), with their helically spin-momentum–locked topological surface states (TSSs), are considered promising for spintronics applications. Several recent experiments in TIs have demonstrated a current-induced electronic spin polarization that may be used for all-electrical spin generation and injection. We report spin potentiometric measurements in TIs that have revealed a long-lived persistent electron spin polarization even at zero current. Unaffected by a small bias current and persisting for several days at low temperature, the spin polarization can be induced and reversed by a large “writing” current applied for an extended time. Although the exact mechanism responsible for the observed long-lived persistent spin polarization remains to be better understood, we speculate on possible roles played by nuclear spins hyperfine-coupled to TSS electrons and dynamically polarized by the spin-helical writing current. Such an electrically controlled persistent spin polarization with unprecedented long lifetime could enable a rechargeable spin battery and rewritable spin memory for potential applications in spintronics and quantum information.