PEALD-Grown Crystalline AlN Films on Si (100) with Sharp Interface and Good Uniformity

Aluminum nitride (AlN) thin films were deposited on Si (100) substrates by using plasma-enhanced atomic layer deposition method (PEALD). Optimal PEALD parameters for AlN deposition were investigated. Under saturated deposition conditions, the clearly resolved fringes are observed from X-ray reflecti...

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Detalles Bibliográficos
Autores principales: Liu, Sanjie, Peng, Mingzeng, Hou, Caixia, He, Yingfeng, Li, Meiling, Zheng, Xinhe
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2017
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5395514/
https://www.ncbi.nlm.nih.gov/pubmed/28423865
http://dx.doi.org/10.1186/s11671-017-2049-1

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5395514/
https://www.ncbi.nlm.nih.gov/pubmed/28423865
http://dx.doi.org/10.1186/s11671-017-2049-1

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