GaAs(1−x)Bi(x)/GaN(y)As(1−y) type-II quantum wells: novel strain-balanced heterostructures for GaAs-based near- and mid-infrared photonics

The potential to extend the emission wavelength of photonic devices further into the near- and mid-infrared via pseudomorphic growth on conventional GaAs substrates is appealing for a number of communications and sensing applications. We present a new class of GaAs-based quantum well (QW) heterostru...

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Detalles Bibliográficos
Autores principales: Broderick, Christopher A., Jin, Shirong, Marko, Igor P., Hild, Konstanze, Ludewig, Peter, Bushell, Zoe L., Stolz, Wolfgang, Rorison, Judy M., O’Reilly, Eoin P., Volz, Kerstin, Sweeney, Stephen J.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5395821/
https://www.ncbi.nlm.nih.gov/pubmed/28422129
http://dx.doi.org/10.1038/srep46371

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