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Remote p-type Doping in GaSb/InAs Core-shell Nanowires

By performing first-principles calculation, we investigated the electronic properties of remotely p-type doping GaSb nanowire by a Zn-doped InAs shell. The results show that for bare zinc-blende (ZB) [111] GaSb/InAs core-shell nanowire the Zn p-type doped InAs shell donates free holes to the non-dop...

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Detalles Bibliográficos
Autores principales:	Ning, Feng, Tang, Li-Ming, Zhang, Yong, Chen, Ke-Qiu
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group 2015
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5395954/ https://www.ncbi.nlm.nih.gov/pubmed/26028535 http://dx.doi.org/10.1038/srep10813

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