Enhanced Ferromagnetic Interaction in Modulation-Doped GaMnN Nanorods

In this report, ferromagnetic interactions in modulation-doped GaMnN nanorods grown on Si (111) substrate by plasma-assisted molecular beam epitaxy are investigated with the prospect of achieving a room temperature ferromagnetic semiconductor. Our results indicate the thickness of GaN layer in each...

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Detalles Bibliográficos
Autores principales: Lin, Yuan-Ting, Wadekar, Paritosh Vilas, Kao, Hsiang-Shun, Zheng, Yu-Jung, Chen, Quark Yung-Sung, Huang, Hui-Chun, Cheng, Cheng-Maw, Ho, New-Jin, Tu, Li-Wei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2017
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5398967/
https://www.ncbi.nlm.nih.gov/pubmed/28431463
http://dx.doi.org/10.1186/s11671-017-2061-5

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5398967/
https://www.ncbi.nlm.nih.gov/pubmed/28431463
http://dx.doi.org/10.1186/s11671-017-2061-5

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