pMOSFETs Featuring ALD W Filling Metal Using SiH(4) and B(2)H(6) Precursors in 22 nm Node CMOS Technology

In this paper, pMOSFETs featuring atomic layer deposition (ALD) tungsten (W) using SiH(4) and B(2)H(6) precursors in 22 nm node CMOS technology were investigated. It is found that, in terms of threshold voltage, driving capability, carrier mobility, and the control of short-channel effects, the perf...

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Detalles Bibliográficos
Autores principales: Wang, Guilei, Luo, Jun, Liu, Jinbiao, Yang, Tao, Xu, Yefeng, Li, Junfeng, Yin, Huaxiang, Yan, Jiang, Zhu, Huilong, Zhao, Chao, Ye, Tianchun, Radamson, Henry H.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2017
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5406310/
https://www.ncbi.nlm.nih.gov/pubmed/28449546
http://dx.doi.org/10.1186/s11671-017-2080-2
Descripción
Sumario:In this paper, pMOSFETs featuring atomic layer deposition (ALD) tungsten (W) using SiH(4) and B(2)H(6) precursors in 22 nm node CMOS technology were investigated. It is found that, in terms of threshold voltage, driving capability, carrier mobility, and the control of short-channel effects, the performance of devices featuring ALD W using SiH(4) is superior to that of devices featuring ALD W using B(2)H(6). This disparity in device performance results from different metal gate-induced strain from ALD W using SiH(4) and B(2)H(6) precursors, i.e. tensile stresses for SiH(4) (~2.4 GPa) and for B(2)H(6) (~0.9 GPa).

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