pMOSFETs Featuring ALD W Filling Metal Using SiH(4) and B(2)H(6) Precursors in 22 nm Node CMOS Technology

In this paper, pMOSFETs featuring atomic layer deposition (ALD) tungsten (W) using SiH(4) and B(2)H(6) precursors in 22 nm node CMOS technology were investigated. It is found that, in terms of threshold voltage, driving capability, carrier mobility, and the control of short-channel effects, the perf...

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Autores principales: Wang, Guilei, Luo, Jun, Liu, Jinbiao, Yang, Tao, Xu, Yefeng, Li, Junfeng, Yin, Huaxiang, Yan, Jiang, Zhu, Huilong, Zhao, Chao, Ye, Tianchun, Radamson, Henry H.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2017
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5406310/
https://www.ncbi.nlm.nih.gov/pubmed/28449546
http://dx.doi.org/10.1186/s11671-017-2080-2
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author Wang, Guilei
Luo, Jun
Liu, Jinbiao
Yang, Tao
Xu, Yefeng
Li, Junfeng
Yin, Huaxiang
Yan, Jiang
Zhu, Huilong
Zhao, Chao
Ye, Tianchun
Radamson, Henry H.
author_facet Wang, Guilei
Luo, Jun
Liu, Jinbiao
Yang, Tao
Xu, Yefeng
Li, Junfeng
Yin, Huaxiang
Yan, Jiang
Zhu, Huilong
Zhao, Chao
Ye, Tianchun
Radamson, Henry H.
author_sort Wang, Guilei
collection PubMed
description In this paper, pMOSFETs featuring atomic layer deposition (ALD) tungsten (W) using SiH(4) and B(2)H(6) precursors in 22 nm node CMOS technology were investigated. It is found that, in terms of threshold voltage, driving capability, carrier mobility, and the control of short-channel effects, the performance of devices featuring ALD W using SiH(4) is superior to that of devices featuring ALD W using B(2)H(6). This disparity in device performance results from different metal gate-induced strain from ALD W using SiH(4) and B(2)H(6) precursors, i.e. tensile stresses for SiH(4) (~2.4 GPa) and for B(2)H(6) (~0.9 GPa).
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spelling pubmed-54063102017-05-15 pMOSFETs Featuring ALD W Filling Metal Using SiH(4) and B(2)H(6) Precursors in 22 nm Node CMOS Technology Wang, Guilei Luo, Jun Liu, Jinbiao Yang, Tao Xu, Yefeng Li, Junfeng Yin, Huaxiang Yan, Jiang Zhu, Huilong Zhao, Chao Ye, Tianchun Radamson, Henry H. Nanoscale Res Lett Nano Express In this paper, pMOSFETs featuring atomic layer deposition (ALD) tungsten (W) using SiH(4) and B(2)H(6) precursors in 22 nm node CMOS technology were investigated. It is found that, in terms of threshold voltage, driving capability, carrier mobility, and the control of short-channel effects, the performance of devices featuring ALD W using SiH(4) is superior to that of devices featuring ALD W using B(2)H(6). This disparity in device performance results from different metal gate-induced strain from ALD W using SiH(4) and B(2)H(6) precursors, i.e. tensile stresses for SiH(4) (~2.4 GPa) and for B(2)H(6) (~0.9 GPa). Springer US 2017-04-26 /pmc/articles/PMC5406310/ /pubmed/28449546 http://dx.doi.org/10.1186/s11671-017-2080-2 Text en © The Author(s). 2017 Open AccessThis article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
spellingShingle Nano Express
Wang, Guilei
Luo, Jun
Liu, Jinbiao
Yang, Tao
Xu, Yefeng
Li, Junfeng
Yin, Huaxiang
Yan, Jiang
Zhu, Huilong
Zhao, Chao
Ye, Tianchun
Radamson, Henry H.
pMOSFETs Featuring ALD W Filling Metal Using SiH(4) and B(2)H(6) Precursors in 22 nm Node CMOS Technology
title pMOSFETs Featuring ALD W Filling Metal Using SiH(4) and B(2)H(6) Precursors in 22 nm Node CMOS Technology
title_full pMOSFETs Featuring ALD W Filling Metal Using SiH(4) and B(2)H(6) Precursors in 22 nm Node CMOS Technology
title_fullStr pMOSFETs Featuring ALD W Filling Metal Using SiH(4) and B(2)H(6) Precursors in 22 nm Node CMOS Technology
title_full_unstemmed pMOSFETs Featuring ALD W Filling Metal Using SiH(4) and B(2)H(6) Precursors in 22 nm Node CMOS Technology
title_short pMOSFETs Featuring ALD W Filling Metal Using SiH(4) and B(2)H(6) Precursors in 22 nm Node CMOS Technology
title_sort pmosfets featuring ald w filling metal using sih(4) and b(2)h(6) precursors in 22 nm node cmos technology
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5406310/
https://www.ncbi.nlm.nih.gov/pubmed/28449546
http://dx.doi.org/10.1186/s11671-017-2080-2
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