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pMOSFETs Featuring ALD W Filling Metal Using SiH(4) and B(2)H(6) Precursors in 22 nm Node CMOS Technology
In this paper, pMOSFETs featuring atomic layer deposition (ALD) tungsten (W) using SiH(4) and B(2)H(6) precursors in 22 nm node CMOS technology were investigated. It is found that, in terms of threshold voltage, driving capability, carrier mobility, and the control of short-channel effects, the perf...
| Autores principales: | , , , , , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer US
2017
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5406310/ https://www.ncbi.nlm.nih.gov/pubmed/28449546 http://dx.doi.org/10.1186/s11671-017-2080-2 |