Cargando…

Corrigendum: Thermal transport in nanocrystalline Si and SiGe by ab initio based Monte Carlo simulation

Detalles Bibliográficos
Autores principales:	Yang, Lina, Minnich, Austin J.
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group 2017
Materias:	Corrigenda
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5411812/ https://www.ncbi.nlm.nih.gov/pubmed/28462926 http://dx.doi.org/10.1038/srep46771

Ejemplares similares

Thermal transport in nanocrystalline Si and SiGe by ab initio based Monte Carlo simulation
por: Yang, Lina, et al.
Publicado: (2017)

Corrigendum: Ultra-low Thermal Conductivity in Si/Ge Hierarchical Superlattice Nanowire
por: Mu, Xin, et al.
Publicado: (2016)

Selection of SiGe foundry
por: de La Taille, C.
Publicado: (2016)

Impact of Phonon Surface Scattering on Thermal Energy Distribution of Si and SiGe Nanowires
por: Malhotra, Abhinav, et al.
Publicado: (2016)

BICMOS SiGe engineering run
por: Seguin-Moreau, N.
Publicado: (2018)

Enhancing the Coherent Phonon Transport in SiGe Nanowires with Dense Si/Ge Interfaces
por: Cheng, Yajuan, et al.
Publicado: (2022)

Spin independence of the strongly enhanced effective mass in ultra-clean SiGe/Si/SiGe two-dimensional electron system
por: Melnikov, M. Yu., et al.
Publicado: (2023)

Corrigendum: Dispersion of nonresonant third-order nonlinearities in GeSiSn ternary alloys
por: De Leonardis, Francesco, et al.
Publicado: (2016)

Monte Carlo methods in AB initio quantum chemistry: quantum Monte Carlo for molecules
por: Lester, William A, et al.
Publicado: (1994)

High-Performance P- and N-Type SiGe/Si Strained Super-Lattice FinFET and CMOS Inverter: Comparison of Si and SiGe FinFET
por: Yao, Yi-Ju, et al.
Publicado: (2023)

Strained MOSFETs on ordered SiGe dots
por: Cervenka, Johann, et al.
Publicado: (2011)

Atomistic Insights into Ultrafast SiGe Nanoprocessing
por: Calogero, Gaetano, et al.
Publicado: (2023)

CORRIGENDUM: Computational Study of In-Plane Phonon Transport in Si Thin Films
por: Wang, Xinjiang, et al.
Publicado: (2015)

Formation of Nanopits in Si Capping Layers on SiGe Quantum Dots
por: Cui, Jian, et al.
Publicado: (2010)

Corrigendum: Revisiting metallization boundary of warm dense helium in a wide ρ-T regime from ab initio study
por: Zhang, Wei, et al.
Publicado: (2017)

Microwave Annealing for NiSiGe Schottky Junction on SiGe P-Channel
por: Lin, Yu-Hsien, et al.
Publicado: (2015)

Broadband Ge/SiGe quantum dot photodetector on pseudosubstrate
por: Yakimov, Andrew, et al.
Publicado: (2013)

Poly-SiGe for MEMS-above-CMOS sensors
por: Gonzalez Ruiz, Pilar, et al.
Publicado: (2014)

Technology computer aided design for Si, SiGe and GaAs integrated circuits
por: Armstrong, GA, et al.
Publicado: (2007)

Atomic fluctuations lifting the energy degeneracy in Si/SiGe quantum dots
por: Paquelet Wuetz, Brian, et al.
Publicado: (2022)

Formation mechanisms of nano and microcones by laser radiation on surfaces of Si, Ge, and SiGe crystals
por: Medvid, Artur, et al.
Publicado: (2013)

Epitaxial growth of SiGe films by annealing Al–Ge alloyed pastes on Si substrate
por: Fukuda, Keisuke, et al.
Publicado: (2022)

Size Evolution of Ordered SiGe Islands Grown by Surface Thermal Diffusion on Pit-Patterned Si(100) Surface
por: Vanacore, GiovanniMaria, et al.
Publicado: (2010)

Computational materials science: from ab initio to Monte Carlo methods
por: Ohno, Kaoru, et al.
Publicado: (1999)

Bright photoluminescence from ordered arrays of SiGe nanowires grown on Si(111)
por: Lockwood, D J, et al.
Publicado: (2014)

Transitioning from Si to SiGe Nanowires as Thermoelectric Material in Silicon-Based Microgenerators
por: Fonseca, Luis, et al.
Publicado: (2021)

SiGe-based re-engineering of electronic warfare subsystems
por: Lambrechts, Wynand, et al.
Publicado: (2017)

SiGe, GaAs, and InP heterojunction bipolar transistors
por: Yuan, J S
Publicado: (1999)

Composition profiling of inhomogeneous SiGe nanostructures by Raman spectroscopy
por: Picco, Andrea, et al.
Publicado: (2012)

Phonon transport and thermal conductivity of diamond superlattice nanowires: a comparative study with SiGe superlattice nanowires
por: Qu, Xilong, et al.
Publicado: (2020)

CORRIGENDUM: Landscape cultivation alters δ(30)Si signature in terrestrial ecosystems
por: Vandevenne, Floor I., et al.
Publicado: (2015)

Corrigendum: Characterizing Si:P quantum dot qubits with spin resonance techniques
por: Wang, Yu, et al.
Publicado: (2016)

Giant electro-optic effect in Ge/SiGe coupled quantum wells
por: Frigerio, Jacopo, et al.
Publicado: (2015)

SiGe quantum wells with oscillating Ge concentrations for quantum dot qubits
por: McJunkin, Thomas, et al.
Publicado: (2022)

Ion-Beam-Induced Atomic Mixing in Ge, Si, and SiGe, Studied by Means of Isotope Multilayer Structures
por: Radek, Manuel, et al.
Publicado: (2017)

Growth and characterization of gold catalyzed SiGe nanowires and alternative metal-catalyzed Si nanowires
por: Potié, Alexis, et al.
Publicado: (2011)

Design of High Performance Si/SiGe Heterojunction Tunneling FETs with a T-Shaped Gate
por: Li, Wei, et al.
Publicado: (2017)

Corrigendum: From the Au nano-clusters to the nanoparticles on 4H-SiC (0001)
por: Li, Ming-Yu, et al.
Publicado: (2016)

Defect Characterization in SiGe/SOI Epitaxial Semiconductors by Positron Annihilation
por: Ferragut, R, et al.
Publicado: (2010)

Ordered Arrays of SiGe Islands from Low-Energy PECVD
por: Bollani, M, et al.
Publicado: (2010)

Cannot write session to /tmp/vufind_sessions/sess_mfmf5er0l41hm3r50al5pn5778