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Enhanced stability of filament-type resistive switching by interface engineering

The uncontrollable rupture of the filament accompanied with joule heating deteriorates the resistive switching devices performance, especially on endurance and uniformity. To suppress the undesirable filaments rupture, this work presents an interface engineering methodology by inducing a thin layer...

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Detalles Bibliográficos
Autores principales: Zhu, Y. B., Zheng, K., Wu, X., Ang, L. K.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2017
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5411977/
https://www.ncbi.nlm.nih.gov/pubmed/28462947
http://dx.doi.org/10.1038/srep43664
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author Zhu, Y. B.
Zheng, K.
Wu, X.
Ang, L. K.
author_facet Zhu, Y. B.
Zheng, K.
Wu, X.
Ang, L. K.
author_sort Zhu, Y. B.
collection PubMed
description The uncontrollable rupture of the filament accompanied with joule heating deteriorates the resistive switching devices performance, especially on endurance and uniformity. To suppress the undesirable filaments rupture, this work presents an interface engineering methodology by inducing a thin layer of NiO(x) into a sandwiched Al/TaO(x)/ITO resistive switching device. The NiO(x)/TaO(x) interface barrier can confine the formation and rupture of filaments throughout the entire bulk structure under critical bias setups. The physical mechanism behind is the space-charge-limited conduction dominates in the SET process, while the Schottky emission dominates under the reverse bias.
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spelling pubmed-54119772017-05-03 Enhanced stability of filament-type resistive switching by interface engineering Zhu, Y. B. Zheng, K. Wu, X. Ang, L. K. Sci Rep Article The uncontrollable rupture of the filament accompanied with joule heating deteriorates the resistive switching devices performance, especially on endurance and uniformity. To suppress the undesirable filaments rupture, this work presents an interface engineering methodology by inducing a thin layer of NiO(x) into a sandwiched Al/TaO(x)/ITO resistive switching device. The NiO(x)/TaO(x) interface barrier can confine the formation and rupture of filaments throughout the entire bulk structure under critical bias setups. The physical mechanism behind is the space-charge-limited conduction dominates in the SET process, while the Schottky emission dominates under the reverse bias. Nature Publishing Group 2017-05-02 /pmc/articles/PMC5411977/ /pubmed/28462947 http://dx.doi.org/10.1038/srep43664 Text en Copyright © 2017, The Author(s) http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
spellingShingle Article
Zhu, Y. B.
Zheng, K.
Wu, X.
Ang, L. K.
Enhanced stability of filament-type resistive switching by interface engineering
title Enhanced stability of filament-type resistive switching by interface engineering
title_full Enhanced stability of filament-type resistive switching by interface engineering
title_fullStr Enhanced stability of filament-type resistive switching by interface engineering
title_full_unstemmed Enhanced stability of filament-type resistive switching by interface engineering
title_short Enhanced stability of filament-type resistive switching by interface engineering
title_sort enhanced stability of filament-type resistive switching by interface engineering
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5411977/
https://www.ncbi.nlm.nih.gov/pubmed/28462947
http://dx.doi.org/10.1038/srep43664
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