Numerical dataset for analyzing the performance of a highly efficient ultrathin film CdTe solar cell

The article comprises numerical data of distinct semiconductor materials applied in the sketch of a CdTe absorber based ultrathin film solar cell. Additionally, the contact layer parametric values of the cell have been described also. Therefore, the simulation has been conducted with data related to...

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Detalles Bibliográficos
Autores principales: Sultana, Rucksana Safa, Bahar, Ali Newaz, Asaduzzaman, Md., Bhuiyan, Mohammad Maksudur Rahman, Ahmed, Kawsar
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Elsevier 2017
Materias:
Data Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5412006/
https://www.ncbi.nlm.nih.gov/pubmed/28491935
http://dx.doi.org/10.1016/j.dib.2017.04.015
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author Sultana, Rucksana Safa
Bahar, Ali Newaz
Asaduzzaman, Md.
Bhuiyan, Mohammad Maksudur Rahman
Ahmed, Kawsar
author_facet Sultana, Rucksana Safa
Bahar, Ali Newaz
Asaduzzaman, Md.
Bhuiyan, Mohammad Maksudur Rahman
Ahmed, Kawsar
author_sort Sultana, Rucksana Safa
collection PubMed
description The article comprises numerical data of distinct semiconductor materials applied in the sketch of a CdTe absorber based ultrathin film solar cell. Additionally, the contact layer parametric values of the cell have been described also. Therefore, the simulation has been conducted with data related to the hetero-structured (n-ZnO/n-CdS/p-CdTe/p-ZnTe) semiconductor device and a J–V characteristics curve was obtained. The operating conditions have also been recorded. Afterward, the solar cell performance parameters such as open circuit voltage (V(oc)), short circuit current density (J(sc)), fill factor (FF), and efficiency (η) have been investigated and compared with reference cell.
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spelling pubmed-54120062017-05-10 Numerical dataset for analyzing the performance of a highly efficient ultrathin film CdTe solar cell Sultana, Rucksana Safa Bahar, Ali Newaz Asaduzzaman, Md. Bhuiyan, Mohammad Maksudur Rahman Ahmed, Kawsar Data Brief Data Article The article comprises numerical data of distinct semiconductor materials applied in the sketch of a CdTe absorber based ultrathin film solar cell. Additionally, the contact layer parametric values of the cell have been described also. Therefore, the simulation has been conducted with data related to the hetero-structured (n-ZnO/n-CdS/p-CdTe/p-ZnTe) semiconductor device and a J–V characteristics curve was obtained. The operating conditions have also been recorded. Afterward, the solar cell performance parameters such as open circuit voltage (V(oc)), short circuit current density (J(sc)), fill factor (FF), and efficiency (η) have been investigated and compared with reference cell. Elsevier 2017-04-19 /pmc/articles/PMC5412006/ /pubmed/28491935 http://dx.doi.org/10.1016/j.dib.2017.04.015 Text en © 2017 The Authors http://creativecommons.org/licenses/by/4.0/ This is an open access article under the CC BY license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Data Article
Sultana, Rucksana Safa
Bahar, Ali Newaz
Asaduzzaman, Md.
Bhuiyan, Mohammad Maksudur Rahman
Ahmed, Kawsar
Numerical dataset for analyzing the performance of a highly efficient ultrathin film CdTe solar cell
title Numerical dataset for analyzing the performance of a highly efficient ultrathin film CdTe solar cell
title_full Numerical dataset for analyzing the performance of a highly efficient ultrathin film CdTe solar cell
title_fullStr Numerical dataset for analyzing the performance of a highly efficient ultrathin film CdTe solar cell
title_full_unstemmed Numerical dataset for analyzing the performance of a highly efficient ultrathin film CdTe solar cell
title_short Numerical dataset for analyzing the performance of a highly efficient ultrathin film CdTe solar cell
title_sort numerical dataset for analyzing the performance of a highly efficient ultrathin film cdte solar cell
topic Data Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5412006/
https://www.ncbi.nlm.nih.gov/pubmed/28491935
http://dx.doi.org/10.1016/j.dib.2017.04.015
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