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A new mechanism of voltage-dependent gating exposed by K(V)10.1 channels interrupted between voltage sensor and pore
Voltage-gated ion channels couple transmembrane potential changes to ion flow. Conformational changes in the voltage-sensing domain (VSD) of the channel are thought to be transmitted to the pore domain (PD) through an α-helical linker between them (S4–S5 linker). However, our recent work on channels...
| Autores principales: | , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
The Rockefeller University Press
2017
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5412533/ https://www.ncbi.nlm.nih.gov/pubmed/28360219 http://dx.doi.org/10.1085/jgp.201611742 |