Surface Passivation of Silicon Using HfO(2) Thin Films Deposited by Remote Plasma Atomic Layer Deposition System

Hafnium oxide (HfO(2)) thin films have attracted much attention owing to their usefulness in equivalent oxide thickness scaling in microelectronics, which arises from their high dielectric constant and thermodynamic stability with silicon. However, the surface passivation properties of such films, p...

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Detalles Bibliográficos
Autores principales: Zhang, Xiao-Ying, Hsu, Chia-Hsun, Lien, Shui-Yang, Chen, Song-Yan, Huang, Wei, Yang, Chih-Hsiang, Kung, Chung-Yuan, Zhu, Wen-Zhang, Xiong, Fei-Bing, Meng, Xian-Guo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2017
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5418172/
https://www.ncbi.nlm.nih.gov/pubmed/28476082
http://dx.doi.org/10.1186/s11671-017-2098-5

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5418172/
https://www.ncbi.nlm.nih.gov/pubmed/28476082
http://dx.doi.org/10.1186/s11671-017-2098-5

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