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Feasibility Study of Extended-Gate-Type Silicon Nanowire Field-Effect Transistors for Neural Recording

In this research, a high performance silicon nanowire field-effect transistor (transconductance as high as 34 µS and sensitivity as 84 nS/mV) is extensively studied and directly compared with planar passive microelectrode arrays for neural recording application. Electrical and electrochemical charac...

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Detalles Bibliográficos
Autores principales:	Kang, Hongki, Kim, Jee-Yeon, Choi, Yang-Kyu, Nam, Yoonkey
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2017
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5421665/ https://www.ncbi.nlm.nih.gov/pubmed/28350370 http://dx.doi.org/10.3390/s17040705

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