Optimum Design Rules for CMOS Hall Sensors

This manuscript analyzes the effects of design parameters, such as aspect ratio, doping concentration and bias, on the performance of a general CMOS Hall sensor, with insight on current-related sensitivity, power consumption, and bandwidth. The article focuses on rectangular-shaped Hall probes since...

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Detalles Bibliográficos
Autores principales: Crescentini, Marco, Biondi, Michele, Romani, Aldo, Tartagni, Marco, Sangiorgi, Enrico
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5422038/
https://www.ncbi.nlm.nih.gov/pubmed/28375191
http://dx.doi.org/10.3390/s17040765
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author Crescentini, Marco
Biondi, Michele
Romani, Aldo
Tartagni, Marco
Sangiorgi, Enrico
author_facet Crescentini, Marco
Biondi, Michele
Romani, Aldo
Tartagni, Marco
Sangiorgi, Enrico
author_sort Crescentini, Marco
collection PubMed
description This manuscript analyzes the effects of design parameters, such as aspect ratio, doping concentration and bias, on the performance of a general CMOS Hall sensor, with insight on current-related sensitivity, power consumption, and bandwidth. The article focuses on rectangular-shaped Hall probes since this is the most general geometry leading to shape-independent results. The devices are analyzed by means of 3D-TCAD simulations embedding galvanomagnetic transport model, which takes into account the Lorentz force acting on carriers due to a magnetic field. Simulation results define a set of trade-offs and design rules that can be used by electronic designers to conceive their own Hall probes.
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spelling pubmed-54220382017-05-12 Optimum Design Rules for CMOS Hall Sensors Crescentini, Marco Biondi, Michele Romani, Aldo Tartagni, Marco Sangiorgi, Enrico Sensors (Basel) Article This manuscript analyzes the effects of design parameters, such as aspect ratio, doping concentration and bias, on the performance of a general CMOS Hall sensor, with insight on current-related sensitivity, power consumption, and bandwidth. The article focuses on rectangular-shaped Hall probes since this is the most general geometry leading to shape-independent results. The devices are analyzed by means of 3D-TCAD simulations embedding galvanomagnetic transport model, which takes into account the Lorentz force acting on carriers due to a magnetic field. Simulation results define a set of trade-offs and design rules that can be used by electronic designers to conceive their own Hall probes. MDPI 2017-04-04 /pmc/articles/PMC5422038/ /pubmed/28375191 http://dx.doi.org/10.3390/s17040765 Text en © 2017 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Crescentini, Marco
Biondi, Michele
Romani, Aldo
Tartagni, Marco
Sangiorgi, Enrico
Optimum Design Rules for CMOS Hall Sensors
title Optimum Design Rules for CMOS Hall Sensors
title_full Optimum Design Rules for CMOS Hall Sensors
title_fullStr Optimum Design Rules for CMOS Hall Sensors
title_full_unstemmed Optimum Design Rules for CMOS Hall Sensors
title_short Optimum Design Rules for CMOS Hall Sensors
title_sort optimum design rules for cmos hall sensors
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5422038/
https://www.ncbi.nlm.nih.gov/pubmed/28375191
http://dx.doi.org/10.3390/s17040765
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