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Room-temperature helimagnetism in FeGe thin films

Chiral magnets are promising materials for the realisation of high-density and low-power spintronic memory devices. For these future applications, a key requirement is the synthesis of appropriate materials in the form of thin films ordering well above room temperature. Driven by the Dzyaloshinskii-...

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Detalles Bibliográficos
Autores principales: Zhang, S. L., Stasinopoulos, I., Lancaster, T., Xiao, F., Bauer, A., Rucker, F., Baker, A. A., Figueroa, A. I., Salman, Z., Pratt, F. L., Blundell, S. J., Prokscha, T., Suter, A., Waizner, J., Garst, M., Grundler, D., van der Laan, G., Pfleiderer, C., Hesjedal, T.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5427977/
https://www.ncbi.nlm.nih.gov/pubmed/28273923
http://dx.doi.org/10.1038/s41598-017-00201-z
Descripción
Sumario:Chiral magnets are promising materials for the realisation of high-density and low-power spintronic memory devices. For these future applications, a key requirement is the synthesis of appropriate materials in the form of thin films ordering well above room temperature. Driven by the Dzyaloshinskii-Moriya interaction, the cubic compound FeGe exhibits helimagnetism with a relatively high transition temperature of 278 K in bulk crystals. We demonstrate that this temperature can be enhanced significantly in thin films. Using x-ray scattering and ferromagnetic resonance techniques, we provide unambiguous experimental evidence for long-wavelength helimagnetic order at room temperature and magnetic properties similar to the bulk material. We obtain α (intr) = 0.0036 ± 0.0003 at 310 K for the intrinsic damping parameter. We probe the dynamics of the system by means of muon-spin rotation, indicating that the ground state is reached via a freezing out of slow dynamics. Our work paves the way towards the fabrication of thin films of chiral magnets that host certain spin whirls, so-called skyrmions, at room temperature and potentially offer integrability into modern electronics.