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Si-rich Silicon Nitride for Nonlinear Signal Processing Applications
Nonlinear silicon photonic devices have attracted considerable attention thanks to their ability to show large third-order nonlinear effects at moderate power levels allowing for all-optical signal processing functionalities in miniaturized components. Although significant efforts have been made and...
Autores principales: | , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2017
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5428390/ https://www.ncbi.nlm.nih.gov/pubmed/28154419 http://dx.doi.org/10.1038/s41598-017-00062-6 |
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author | Lacava, Cosimo Stankovic, Stevan Khokhar, Ali Z. Bucio, T. Dominguez Gardes, F. Y. Reed, Graham T. Richardson, David J. Petropoulos, Periklis |
author_facet | Lacava, Cosimo Stankovic, Stevan Khokhar, Ali Z. Bucio, T. Dominguez Gardes, F. Y. Reed, Graham T. Richardson, David J. Petropoulos, Periklis |
author_sort | Lacava, Cosimo |
collection | PubMed |
description | Nonlinear silicon photonic devices have attracted considerable attention thanks to their ability to show large third-order nonlinear effects at moderate power levels allowing for all-optical signal processing functionalities in miniaturized components. Although significant efforts have been made and many nonlinear optical functions have already been demonstrated in this platform, the performance of nonlinear silicon photonic devices remains fundamentally limited at the telecom wavelength region due to the two photon absorption (TPA) and related effects. In this work, we propose an alternative CMOS-compatible platform, based on silicon-rich silicon nitride that can overcome this limitation. By carefully selecting the material deposition parameters, we show that both of the device linear and nonlinear properties can be tuned in order to exhibit the desired behaviour at the selected wavelength region. A rigorous and systematic fabrication and characterization campaign of different material compositions is presented, enabling us to demonstrate TPA-free CMOS-compatible waveguides with low linear loss (~1.5 dB/cm) and enhanced Kerr nonlinear response (Re{γ} = 16 Wm(−1)). Thanks to these properties, our nonlinear waveguides are able to produce a π nonlinear phase shift, paving the way for the development of practical devices for future optical communication applications. |
format | Online Article Text |
id | pubmed-5428390 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2017 |
publisher | Nature Publishing Group UK |
record_format | MEDLINE/PubMed |
spelling | pubmed-54283902017-05-15 Si-rich Silicon Nitride for Nonlinear Signal Processing Applications Lacava, Cosimo Stankovic, Stevan Khokhar, Ali Z. Bucio, T. Dominguez Gardes, F. Y. Reed, Graham T. Richardson, David J. Petropoulos, Periklis Sci Rep Article Nonlinear silicon photonic devices have attracted considerable attention thanks to their ability to show large third-order nonlinear effects at moderate power levels allowing for all-optical signal processing functionalities in miniaturized components. Although significant efforts have been made and many nonlinear optical functions have already been demonstrated in this platform, the performance of nonlinear silicon photonic devices remains fundamentally limited at the telecom wavelength region due to the two photon absorption (TPA) and related effects. In this work, we propose an alternative CMOS-compatible platform, based on silicon-rich silicon nitride that can overcome this limitation. By carefully selecting the material deposition parameters, we show that both of the device linear and nonlinear properties can be tuned in order to exhibit the desired behaviour at the selected wavelength region. A rigorous and systematic fabrication and characterization campaign of different material compositions is presented, enabling us to demonstrate TPA-free CMOS-compatible waveguides with low linear loss (~1.5 dB/cm) and enhanced Kerr nonlinear response (Re{γ} = 16 Wm(−1)). Thanks to these properties, our nonlinear waveguides are able to produce a π nonlinear phase shift, paving the way for the development of practical devices for future optical communication applications. Nature Publishing Group UK 2017-02-02 /pmc/articles/PMC5428390/ /pubmed/28154419 http://dx.doi.org/10.1038/s41598-017-00062-6 Text en © The Author(s) 2017 This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ |
spellingShingle | Article Lacava, Cosimo Stankovic, Stevan Khokhar, Ali Z. Bucio, T. Dominguez Gardes, F. Y. Reed, Graham T. Richardson, David J. Petropoulos, Periklis Si-rich Silicon Nitride for Nonlinear Signal Processing Applications |
title | Si-rich Silicon Nitride for Nonlinear Signal Processing Applications |
title_full | Si-rich Silicon Nitride for Nonlinear Signal Processing Applications |
title_fullStr | Si-rich Silicon Nitride for Nonlinear Signal Processing Applications |
title_full_unstemmed | Si-rich Silicon Nitride for Nonlinear Signal Processing Applications |
title_short | Si-rich Silicon Nitride for Nonlinear Signal Processing Applications |
title_sort | si-rich silicon nitride for nonlinear signal processing applications |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5428390/ https://www.ncbi.nlm.nih.gov/pubmed/28154419 http://dx.doi.org/10.1038/s41598-017-00062-6 |
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