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Spin-dependent thermoelectric effects in Fe-C(6) doped monolayer MoS(2)

By using the non-equilibrium Green’s function with density functional theory, we have studied the thermal spin transport properties of Fe-C(6) cluster doped monolayer MoS(2). The results show that the device has a perfect Seebeck effect under temperature difference without gate voltage or bias volta...

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Detalles Bibliográficos
Autores principales: Zhu, Lin, Zou, Fei, Gao, Guoying, Yao, Kailun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5428711/
https://www.ncbi.nlm.nih.gov/pubmed/28356556
http://dx.doi.org/10.1038/s41598-017-00599-6
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author Zhu, Lin
Zou, Fei
Gao, Guoying
Yao, Kailun
author_facet Zhu, Lin
Zou, Fei
Gao, Guoying
Yao, Kailun
author_sort Zhu, Lin
collection PubMed
description By using the non-equilibrium Green’s function with density functional theory, we have studied the thermal spin transport properties of Fe-C(6) cluster doped monolayer MoS(2). The results show that the device has a perfect Seebeck effect under temperature difference without gate voltage or bias voltage. Moreover, we also find the thermal colossal magnetoresistance effect, which is as high as 10(7)%. The competition between spin up electrons and spin down holes of the parallel spin configuration leads to peculiar behavior of colossal magnetoresistance and thermo-current, which is essential for the design of thermal transistors. These results are useful in future MoS(2)-based multifunctional spin caloritronic devices.
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spelling pubmed-54287112017-05-15 Spin-dependent thermoelectric effects in Fe-C(6) doped monolayer MoS(2) Zhu, Lin Zou, Fei Gao, Guoying Yao, Kailun Sci Rep Article By using the non-equilibrium Green’s function with density functional theory, we have studied the thermal spin transport properties of Fe-C(6) cluster doped monolayer MoS(2). The results show that the device has a perfect Seebeck effect under temperature difference without gate voltage or bias voltage. Moreover, we also find the thermal colossal magnetoresistance effect, which is as high as 10(7)%. The competition between spin up electrons and spin down holes of the parallel spin configuration leads to peculiar behavior of colossal magnetoresistance and thermo-current, which is essential for the design of thermal transistors. These results are useful in future MoS(2)-based multifunctional spin caloritronic devices. Nature Publishing Group UK 2017-03-29 /pmc/articles/PMC5428711/ /pubmed/28356556 http://dx.doi.org/10.1038/s41598-017-00599-6 Text en © The Author(s) 2017 This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
spellingShingle Article
Zhu, Lin
Zou, Fei
Gao, Guoying
Yao, Kailun
Spin-dependent thermoelectric effects in Fe-C(6) doped monolayer MoS(2)
title Spin-dependent thermoelectric effects in Fe-C(6) doped monolayer MoS(2)
title_full Spin-dependent thermoelectric effects in Fe-C(6) doped monolayer MoS(2)
title_fullStr Spin-dependent thermoelectric effects in Fe-C(6) doped monolayer MoS(2)
title_full_unstemmed Spin-dependent thermoelectric effects in Fe-C(6) doped monolayer MoS(2)
title_short Spin-dependent thermoelectric effects in Fe-C(6) doped monolayer MoS(2)
title_sort spin-dependent thermoelectric effects in fe-c(6) doped monolayer mos(2)
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5428711/
https://www.ncbi.nlm.nih.gov/pubmed/28356556
http://dx.doi.org/10.1038/s41598-017-00599-6
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