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X-ray induced electrostatic graphene doping via defect charging in gate dielectric
Graphene field effect transistors are becoming an integral part of advanced devices. Hence, the advanced strategies for both characterization and tuning of graphene properties are required. Here we show that the X-ray irradiation at the zero applied gate voltage causes very strong negative doping of...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2017
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5428791/ https://www.ncbi.nlm.nih.gov/pubmed/28373676 http://dx.doi.org/10.1038/s41598-017-00673-z |