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Inkjet Printing of High Performance Transistors with Micron Order Chemically Set Gaps

This paper reports a 100% inkjet printed transistor with a short channel of approximately 1 µm with an operating speed up to 18.21 GHz. Printed electronics are a burgeoning area in electronics development, but are often stymied by the large minimum feature size. To combat this, techniques were devel...

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Autores principales: Grubb, Peter Mack, Subbaraman, Harish, Park, Saungeun, Akinwande, Deji, Chen, Ray T.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5430662/
https://www.ncbi.nlm.nih.gov/pubmed/28446781
http://dx.doi.org/10.1038/s41598-017-01391-2
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author Grubb, Peter Mack
Subbaraman, Harish
Park, Saungeun
Akinwande, Deji
Chen, Ray T.
author_facet Grubb, Peter Mack
Subbaraman, Harish
Park, Saungeun
Akinwande, Deji
Chen, Ray T.
author_sort Grubb, Peter Mack
collection PubMed
description This paper reports a 100% inkjet printed transistor with a short channel of approximately 1 µm with an operating speed up to 18.21 GHz. Printed electronics are a burgeoning area in electronics development, but are often stymied by the large minimum feature size. To combat this, techniques were developed to allow for the printings of much shorter transistor channels. The small gap size is achieved through the use of silver inks with different chemical properties to prevent mixing. The combination of the short channel and semiconducting carbon nanotubes (CNT) allows for an exceptional experimentally measured on/off ratio of 10(6). This all inkjet printed transistor allows for the fabrication of devices using roll-to-roll methodologies with no additional overhead compared to current state of the art production methods.
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spelling pubmed-54306622017-05-15 Inkjet Printing of High Performance Transistors with Micron Order Chemically Set Gaps Grubb, Peter Mack Subbaraman, Harish Park, Saungeun Akinwande, Deji Chen, Ray T. Sci Rep Article This paper reports a 100% inkjet printed transistor with a short channel of approximately 1 µm with an operating speed up to 18.21 GHz. Printed electronics are a burgeoning area in electronics development, but are often stymied by the large minimum feature size. To combat this, techniques were developed to allow for the printings of much shorter transistor channels. The small gap size is achieved through the use of silver inks with different chemical properties to prevent mixing. The combination of the short channel and semiconducting carbon nanotubes (CNT) allows for an exceptional experimentally measured on/off ratio of 10(6). This all inkjet printed transistor allows for the fabrication of devices using roll-to-roll methodologies with no additional overhead compared to current state of the art production methods. Nature Publishing Group UK 2017-04-26 /pmc/articles/PMC5430662/ /pubmed/28446781 http://dx.doi.org/10.1038/s41598-017-01391-2 Text en © The Author(s) 2017 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
Grubb, Peter Mack
Subbaraman, Harish
Park, Saungeun
Akinwande, Deji
Chen, Ray T.
Inkjet Printing of High Performance Transistors with Micron Order Chemically Set Gaps
title Inkjet Printing of High Performance Transistors with Micron Order Chemically Set Gaps
title_full Inkjet Printing of High Performance Transistors with Micron Order Chemically Set Gaps
title_fullStr Inkjet Printing of High Performance Transistors with Micron Order Chemically Set Gaps
title_full_unstemmed Inkjet Printing of High Performance Transistors with Micron Order Chemically Set Gaps
title_short Inkjet Printing of High Performance Transistors with Micron Order Chemically Set Gaps
title_sort inkjet printing of high performance transistors with micron order chemically set gaps
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5430662/
https://www.ncbi.nlm.nih.gov/pubmed/28446781
http://dx.doi.org/10.1038/s41598-017-01391-2
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