Fully transparent high performance thin film transistors with bilayer ITO/Al-Sn-Zn-O channel structures fabricated on glass substrate

In this work, fully transparent high performance double-channel indium-tin-oxide/Al–Sn–Zn–O thin-film transistors (ITO/ATZO TFTs) are successfully fabricated on glass by radio frequency (RF) magnetron sputtering. The ITO layer acts as the bottom channel layer to increase the channel carrier concentr...

Descripción completa

Detalles Bibliográficos
Autores principales: Cong, Yingying, Han, Dedong, Dong, Junchen, Zhang, Shengdong, Zhang, Xing, Wang, Yi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5431434/
https://www.ncbi.nlm.nih.gov/pubmed/28473695
http://dx.doi.org/10.1038/s41598-017-01691-7
_version_ 1783236426007052288
author Cong, Yingying
Han, Dedong
Dong, Junchen
Zhang, Shengdong
Zhang, Xing
Wang, Yi
author_facet Cong, Yingying
Han, Dedong
Dong, Junchen
Zhang, Shengdong
Zhang, Xing
Wang, Yi
author_sort Cong, Yingying
collection PubMed
description In this work, fully transparent high performance double-channel indium-tin-oxide/Al–Sn–Zn–O thin-film transistors (ITO/ATZO TFTs) are successfully fabricated on glass by radio frequency (RF) magnetron sputtering. The ITO layer acts as the bottom channel layer to increase the channel carrier concentration. The top ATZO channel layer, which is deposited via high oxygen partial pressure in the sputtering process, is useful to control the minimum off-state current. After annealing, the ITO/ATZO TFT demonstrates outstanding electrical performances, including a high ON/OFF current ratio (I(on)/I(off)) of 3.5 × 10(8), a steep threshold swing (SS) of 142.2 mV/decade, a superior saturation mobility (μ(sat)) of 246.0 cm(2)/Vs, and a threshold voltage V(T) of 0.5 V. The operation mechanisms for double-channel structures are also clarified.
format Online
Article
Text
id pubmed-5431434
institution National Center for Biotechnology Information
language English
publishDate 2017
publisher Nature Publishing Group UK
record_format MEDLINE/PubMed
spelling pubmed-54314342017-05-16 Fully transparent high performance thin film transistors with bilayer ITO/Al-Sn-Zn-O channel structures fabricated on glass substrate Cong, Yingying Han, Dedong Dong, Junchen Zhang, Shengdong Zhang, Xing Wang, Yi Sci Rep Article In this work, fully transparent high performance double-channel indium-tin-oxide/Al–Sn–Zn–O thin-film transistors (ITO/ATZO TFTs) are successfully fabricated on glass by radio frequency (RF) magnetron sputtering. The ITO layer acts as the bottom channel layer to increase the channel carrier concentration. The top ATZO channel layer, which is deposited via high oxygen partial pressure in the sputtering process, is useful to control the minimum off-state current. After annealing, the ITO/ATZO TFT demonstrates outstanding electrical performances, including a high ON/OFF current ratio (I(on)/I(off)) of 3.5 × 10(8), a steep threshold swing (SS) of 142.2 mV/decade, a superior saturation mobility (μ(sat)) of 246.0 cm(2)/Vs, and a threshold voltage V(T) of 0.5 V. The operation mechanisms for double-channel structures are also clarified. Nature Publishing Group UK 2017-05-04 /pmc/articles/PMC5431434/ /pubmed/28473695 http://dx.doi.org/10.1038/s41598-017-01691-7 Text en © The Author(s) 2017 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
Cong, Yingying
Han, Dedong
Dong, Junchen
Zhang, Shengdong
Zhang, Xing
Wang, Yi
Fully transparent high performance thin film transistors with bilayer ITO/Al-Sn-Zn-O channel structures fabricated on glass substrate
title Fully transparent high performance thin film transistors with bilayer ITO/Al-Sn-Zn-O channel structures fabricated on glass substrate
title_full Fully transparent high performance thin film transistors with bilayer ITO/Al-Sn-Zn-O channel structures fabricated on glass substrate
title_fullStr Fully transparent high performance thin film transistors with bilayer ITO/Al-Sn-Zn-O channel structures fabricated on glass substrate
title_full_unstemmed Fully transparent high performance thin film transistors with bilayer ITO/Al-Sn-Zn-O channel structures fabricated on glass substrate
title_short Fully transparent high performance thin film transistors with bilayer ITO/Al-Sn-Zn-O channel structures fabricated on glass substrate
title_sort fully transparent high performance thin film transistors with bilayer ito/al-sn-zn-o channel structures fabricated on glass substrate
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5431434/
https://www.ncbi.nlm.nih.gov/pubmed/28473695
http://dx.doi.org/10.1038/s41598-017-01691-7
work_keys_str_mv AT congyingying fullytransparenthighperformancethinfilmtransistorswithbilayeritoalsnznochannelstructuresfabricatedonglasssubstrate
AT handedong fullytransparenthighperformancethinfilmtransistorswithbilayeritoalsnznochannelstructuresfabricatedonglasssubstrate
AT dongjunchen fullytransparenthighperformancethinfilmtransistorswithbilayeritoalsnznochannelstructuresfabricatedonglasssubstrate
AT zhangshengdong fullytransparenthighperformancethinfilmtransistorswithbilayeritoalsnznochannelstructuresfabricatedonglasssubstrate
AT zhangxing fullytransparenthighperformancethinfilmtransistorswithbilayeritoalsnznochannelstructuresfabricatedonglasssubstrate
AT wangyi fullytransparenthighperformancethinfilmtransistorswithbilayeritoalsnznochannelstructuresfabricatedonglasssubstrate

Ejemplares similares