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Digital Etch Technique for Forming Ultra-Scaled Germanium-Tin (Ge(1−x)Sn(x)) Fin Structure

We developed a new digital etch process that allows precise etching of Germanium or Germanium-tin (Ge(1−x)Sn(x)) materials. The digital etch approach consists of Ge(1−x)Sn(x) oxide formation by plasma oxidation and oxide removal in diluted hydrochloric acid at room temperature. The first step is a s...

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Detalles Bibliográficos
Autores principales:	Wang, Wei, Lei, Dian, Dong, Yuan, Gong, Xiao, Tok, Eng Soon, Yeo, Yee-Chia
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group UK 2017
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5431783/ https://www.ncbi.nlm.nih.gov/pubmed/28500296 http://dx.doi.org/10.1038/s41598-017-01449-1

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