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A new material platform of Si photonics for implementing architecture of dense wavelength division multiplexing on Si bulk wafer
A new materials group to implement dense wavelength division multiplexing (DWDM) in Si photonics is proposed. A large thermo-optic (TO) coefficient of Si malfunctions multiplexer/demultiplexer (MUX/DEMUX) on a chip under thermal fluctuation, and thus DWDM implementation, has been one of the most cha...
Autores principales: | , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Taylor & Francis
2017
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5439400/ https://www.ncbi.nlm.nih.gov/pubmed/28567174 http://dx.doi.org/10.1080/14686996.2017.1301193 |
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author | Zhang, Ziyi Yako, Motoki Ju, Kan Kawai, Naoyuki Chaisakul, Papichaya Tsuchizawa, Tai Hikita, Makoto Yamada, Koji Ishikawa, Yasuhiko Wada, Kazumi |
author_facet | Zhang, Ziyi Yako, Motoki Ju, Kan Kawai, Naoyuki Chaisakul, Papichaya Tsuchizawa, Tai Hikita, Makoto Yamada, Koji Ishikawa, Yasuhiko Wada, Kazumi |
author_sort | Zhang, Ziyi |
collection | PubMed |
description | A new materials group to implement dense wavelength division multiplexing (DWDM) in Si photonics is proposed. A large thermo-optic (TO) coefficient of Si malfunctions multiplexer/demultiplexer (MUX/DEMUX) on a chip under thermal fluctuation, and thus DWDM implementation, has been one of the most challenging targets in Si photonics. The present study specifies an optical materials group for DWDM by a systematic survey of their TO coefficients and refractive indices. The group is classified as mid-index contrast optics (MiDex) materials, and non-stoichiometric silicon nitride (SiN(x)) is chosen to demonstrate its significant thermal stability. The TO coefficient of non-stoichiometric SiN(x) is precisely measured in the temperature range 24–76 °C using the SiN(x) rings prepared by two methods: chemical vapor deposition (CVD) and physical vapor deposition (PVD). The CVD-SiN(x) ring reveals nearly the same TO coefficient reported for stoichiometric CVD-Si(3)N(4), while the value for the PVD-SiN(x) ring is slightly higher. Both SiN(x) rings lock their resonance frequencies within 100 GHz in this temperature range. Since CVD-SiN(x) needs a high temperature annealing to reduce N–H bond absorption, it is concluded that PVD-SiN(x) is suited as a MiDex material introduced in the CMOS back-end-of-line. Further stabilization is required, considering the crosstalk between two channels; a ‘silicone’ polymer is employed to compensate for the temperature fluctuation using its negative TO coefficient, called athermalization. This demonstrates that the resonance of these SiN(x) rings is locked within 50 GHz at the same temperature range in the wavelength range 1460–1620 nm (the so-called S, C, and L bands in optical fiber communication networks). A further survey on the MiDex materials strongly suggests that Al(2)O(3), Ga(2)O(3) Ta(2)O(5), HfO(2) and their alloys should provide even more stable platforms for DWDM implementation in MiDex photonics. It is discussed that the MiDex photonics will find various applications such as medical and environmental sensing and in-vehicle data-communication. |
format | Online Article Text |
id | pubmed-5439400 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2017 |
publisher | Taylor & Francis |
record_format | MEDLINE/PubMed |
spelling | pubmed-54394002017-05-31 A new material platform of Si photonics for implementing architecture of dense wavelength division multiplexing on Si bulk wafer Zhang, Ziyi Yako, Motoki Ju, Kan Kawai, Naoyuki Chaisakul, Papichaya Tsuchizawa, Tai Hikita, Makoto Yamada, Koji Ishikawa, Yasuhiko Wada, Kazumi Sci Technol Adv Mater Optical, Magnetic and Electronic Device Materials A new materials group to implement dense wavelength division multiplexing (DWDM) in Si photonics is proposed. A large thermo-optic (TO) coefficient of Si malfunctions multiplexer/demultiplexer (MUX/DEMUX) on a chip under thermal fluctuation, and thus DWDM implementation, has been one of the most challenging targets in Si photonics. The present study specifies an optical materials group for DWDM by a systematic survey of their TO coefficients and refractive indices. The group is classified as mid-index contrast optics (MiDex) materials, and non-stoichiometric silicon nitride (SiN(x)) is chosen to demonstrate its significant thermal stability. The TO coefficient of non-stoichiometric SiN(x) is precisely measured in the temperature range 24–76 °C using the SiN(x) rings prepared by two methods: chemical vapor deposition (CVD) and physical vapor deposition (PVD). The CVD-SiN(x) ring reveals nearly the same TO coefficient reported for stoichiometric CVD-Si(3)N(4), while the value for the PVD-SiN(x) ring is slightly higher. Both SiN(x) rings lock their resonance frequencies within 100 GHz in this temperature range. Since CVD-SiN(x) needs a high temperature annealing to reduce N–H bond absorption, it is concluded that PVD-SiN(x) is suited as a MiDex material introduced in the CMOS back-end-of-line. Further stabilization is required, considering the crosstalk between two channels; a ‘silicone’ polymer is employed to compensate for the temperature fluctuation using its negative TO coefficient, called athermalization. This demonstrates that the resonance of these SiN(x) rings is locked within 50 GHz at the same temperature range in the wavelength range 1460–1620 nm (the so-called S, C, and L bands in optical fiber communication networks). A further survey on the MiDex materials strongly suggests that Al(2)O(3), Ga(2)O(3) Ta(2)O(5), HfO(2) and their alloys should provide even more stable platforms for DWDM implementation in MiDex photonics. It is discussed that the MiDex photonics will find various applications such as medical and environmental sensing and in-vehicle data-communication. Taylor & Francis 2017-04-13 /pmc/articles/PMC5439400/ /pubmed/28567174 http://dx.doi.org/10.1080/14686996.2017.1301193 Text en © 2017 The Author(s). Published by National Institute for Materials Science in partnership with Taylor & Francis http://creativecommons.org/licenses/by/4.0/ This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. |
spellingShingle | Optical, Magnetic and Electronic Device Materials Zhang, Ziyi Yako, Motoki Ju, Kan Kawai, Naoyuki Chaisakul, Papichaya Tsuchizawa, Tai Hikita, Makoto Yamada, Koji Ishikawa, Yasuhiko Wada, Kazumi A new material platform of Si photonics for implementing architecture of dense wavelength division multiplexing on Si bulk wafer |
title | A new material platform of Si photonics for implementing architecture of dense wavelength division multiplexing on Si bulk wafer |
title_full | A new material platform of Si photonics for implementing architecture of dense wavelength division multiplexing on Si bulk wafer |
title_fullStr | A new material platform of Si photonics for implementing architecture of dense wavelength division multiplexing on Si bulk wafer |
title_full_unstemmed | A new material platform of Si photonics for implementing architecture of dense wavelength division multiplexing on Si bulk wafer |
title_short | A new material platform of Si photonics for implementing architecture of dense wavelength division multiplexing on Si bulk wafer |
title_sort | new material platform of si photonics for implementing architecture of dense wavelength division multiplexing on si bulk wafer |
topic | Optical, Magnetic and Electronic Device Materials |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5439400/ https://www.ncbi.nlm.nih.gov/pubmed/28567174 http://dx.doi.org/10.1080/14686996.2017.1301193 |
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