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Hybrid Integrated Platforms for Silicon Photonics
A review of recent progress in hybrid integrated platforms for silicon photonics is presented. Integration of III-V semiconductors onto silicon-on-insulator substrates based on two different bonding techniques is compared, one comprising only inorganic materials, the other technique using an organic...
Autores principales: | , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Molecular Diversity Preservation International
2010
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5445873/ http://dx.doi.org/10.3390/ma3031782 |
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author | Liang, Di Roelkens, Gunther Baets, Roel Bowers, John E. |
author_facet | Liang, Di Roelkens, Gunther Baets, Roel Bowers, John E. |
author_sort | Liang, Di |
collection | PubMed |
description | A review of recent progress in hybrid integrated platforms for silicon photonics is presented. Integration of III-V semiconductors onto silicon-on-insulator substrates based on two different bonding techniques is compared, one comprising only inorganic materials, the other technique using an organic bonding agent. Issues such as bonding process and mechanism, bonding strength, uniformity, wafer surface requirement, and stress distribution are studied in detail. The application in silicon photonics to realize high-performance active and passive photonic devices on low-cost silicon wafers is discussed. Hybrid integration is believed to be a promising technology in a variety of applications of silicon photonics. |
format | Online Article Text |
id | pubmed-5445873 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2010 |
publisher | Molecular Diversity Preservation International |
record_format | MEDLINE/PubMed |
spelling | pubmed-54458732017-07-28 Hybrid Integrated Platforms for Silicon Photonics Liang, Di Roelkens, Gunther Baets, Roel Bowers, John E. Materials (Basel) Review A review of recent progress in hybrid integrated platforms for silicon photonics is presented. Integration of III-V semiconductors onto silicon-on-insulator substrates based on two different bonding techniques is compared, one comprising only inorganic materials, the other technique using an organic bonding agent. Issues such as bonding process and mechanism, bonding strength, uniformity, wafer surface requirement, and stress distribution are studied in detail. The application in silicon photonics to realize high-performance active and passive photonic devices on low-cost silicon wafers is discussed. Hybrid integration is believed to be a promising technology in a variety of applications of silicon photonics. Molecular Diversity Preservation International 2010-03-12 /pmc/articles/PMC5445873/ http://dx.doi.org/10.3390/ma3031782 Text en © 2010 by the authors; licensee Molecular Diversity Preservation International, Basel, Switzerland. This article is an open-access article distributed under the terms and conditions of the Creative Commons Attribution license (http://creativecommons.org/licenses/by/3.0/). |
spellingShingle | Review Liang, Di Roelkens, Gunther Baets, Roel Bowers, John E. Hybrid Integrated Platforms for Silicon Photonics |
title | Hybrid Integrated Platforms for Silicon Photonics |
title_full | Hybrid Integrated Platforms for Silicon Photonics |
title_fullStr | Hybrid Integrated Platforms for Silicon Photonics |
title_full_unstemmed | Hybrid Integrated Platforms for Silicon Photonics |
title_short | Hybrid Integrated Platforms for Silicon Photonics |
title_sort | hybrid integrated platforms for silicon photonics |
topic | Review |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5445873/ http://dx.doi.org/10.3390/ma3031782 |
work_keys_str_mv | AT liangdi hybridintegratedplatformsforsiliconphotonics AT roelkensgunther hybridintegratedplatformsforsiliconphotonics AT baetsroel hybridintegratedplatformsforsiliconphotonics AT bowersjohne hybridintegratedplatformsforsiliconphotonics |