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Macroporous Semiconductors
Pores in single crystalline semiconductors come in many forms (e.g., pore sizes from 2 nm to > 10 µm; morphologies from perfect pore crystal to fractal) and exhibit many unique properties directly or as nanocompounds if the pores are filled. The various kinds of pores obtained in semiconductors l...
Autores principales: | , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2010
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5445909/ http://dx.doi.org/10.3390/ma3053006 |
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author | Föll, Helmut Leisner, Malte Cojocaru, Ala Carstensen, Jürgen |
author_facet | Föll, Helmut Leisner, Malte Cojocaru, Ala Carstensen, Jürgen |
author_sort | Föll, Helmut |
collection | PubMed |
description | Pores in single crystalline semiconductors come in many forms (e.g., pore sizes from 2 nm to > 10 µm; morphologies from perfect pore crystal to fractal) and exhibit many unique properties directly or as nanocompounds if the pores are filled. The various kinds of pores obtained in semiconductors like Ge, Si, III-V, and II-VI compound semiconductors are systematically reviewed, emphasizing macropores. Essentials of pore formation mechanisms will be discussed, focusing on differences and some open questions but in particular on common properties. Possible applications of porous semiconductors, including for example high explosives, high efficiency electrodes for Li ion batteries, drug delivery systems, solar cells, thermoelectric elements and many novel electronic, optical or sensor devices, will be introduced and discussed. |
format | Online Article Text |
id | pubmed-5445909 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2010 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-54459092017-07-28 Macroporous Semiconductors Föll, Helmut Leisner, Malte Cojocaru, Ala Carstensen, Jürgen Materials (Basel) Review Pores in single crystalline semiconductors come in many forms (e.g., pore sizes from 2 nm to > 10 µm; morphologies from perfect pore crystal to fractal) and exhibit many unique properties directly or as nanocompounds if the pores are filled. The various kinds of pores obtained in semiconductors like Ge, Si, III-V, and II-VI compound semiconductors are systematically reviewed, emphasizing macropores. Essentials of pore formation mechanisms will be discussed, focusing on differences and some open questions but in particular on common properties. Possible applications of porous semiconductors, including for example high explosives, high efficiency electrodes for Li ion batteries, drug delivery systems, solar cells, thermoelectric elements and many novel electronic, optical or sensor devices, will be introduced and discussed. MDPI 2010-05-07 /pmc/articles/PMC5445909/ http://dx.doi.org/10.3390/ma3053006 Text en © 2010 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution license (http://creativecommons.org/licenses/by/3.0/). |
spellingShingle | Review Föll, Helmut Leisner, Malte Cojocaru, Ala Carstensen, Jürgen Macroporous Semiconductors |
title | Macroporous Semiconductors |
title_full | Macroporous Semiconductors |
title_fullStr | Macroporous Semiconductors |
title_full_unstemmed | Macroporous Semiconductors |
title_short | Macroporous Semiconductors |
title_sort | macroporous semiconductors |
topic | Review |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5445909/ http://dx.doi.org/10.3390/ma3053006 |
work_keys_str_mv | AT follhelmut macroporoussemiconductors AT leisnermalte macroporoussemiconductors AT cojocaruala macroporoussemiconductors AT carstensenjurgen macroporoussemiconductors |