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Study of Direct-Contact HfO(2)/Si Interfaces
Controlling monolayer Si oxide at the HfO(2)/Si interface is a challenging issue in scaling the equivalent oxide thickness of HfO(2)/Si gate stack structures. A concept that the author proposes to control the Si oxide interface by using ultra-high vacuum electron-beam HfO(2) deposition is described...
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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MDPI
2012
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5448921/ https://www.ncbi.nlm.nih.gov/pubmed/28817060 http://dx.doi.org/10.3390/ma5030512 |