Comprehensive Study of Lanthanum Aluminate High-Dielectric-Constant Gate Oxides for AdvancedCMOS Devices

A comprehensive study of the electrical and physical characteristics of Lanthanum Aluminate (LaAlO(3)) high-dielectric-constant gate oxides for advanced CMOS devices was performed. The most distinctive feature of LaAlO(3) as compared with Hf-based high-k materials is the thermal stability at the int...

Descripción completa

Detalles Bibliográficos
Autor principal: Suzuki, Masamichi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2012
Materias:
Review
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5448927/
https://www.ncbi.nlm.nih.gov/pubmed/28817057
http://dx.doi.org/10.3390/ma5030443

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5448927/
https://www.ncbi.nlm.nih.gov/pubmed/28817057
http://dx.doi.org/10.3390/ma5030443

Ejemplares similares