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Comprehensive Study of Lanthanum Aluminate High-Dielectric-Constant Gate Oxides for AdvancedCMOS Devices
A comprehensive study of the electrical and physical characteristics of Lanthanum Aluminate (LaAlO(3)) high-dielectric-constant gate oxides for advanced CMOS devices was performed. The most distinctive feature of LaAlO(3) as compared with Hf-based high-k materials is the thermal stability at the int...
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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MDPI
2012
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5448927/ https://www.ncbi.nlm.nih.gov/pubmed/28817057 http://dx.doi.org/10.3390/ma5030443 |