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Degradation Mechanisms for GaN and GaAs High Speed Transistors

We present a review of reliability issues in AlGaN/GaN and AlGaAs/GaAs high electron mobility transistors (HEMTs) as well as Heterojunction Bipolar Transistors (HBTs) in the AlGaAs/GaAs materials systems. Because of the complex nature and multi-faceted operation modes of these devices, reliability s...

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Detalles Bibliográficos
Autores principales:	Cheney, David J., Douglas, Erica A., Liu, Lu, Lo, Chien-Fong, Gila, Brent P., Ren, Fan, Pearton, Stephen J.
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2012
Materias:	Review
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5449049/ http://dx.doi.org/10.3390/ma5122498

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