Growth of High-Density Zinc Oxide Nanorods on Porous Silicon by Thermal Evaporation

The formation of high-density zinc oxide (ZnO) nanorods on porous silicon (PS) substrates at growth temperatures of 600–1000 °C by a simple thermal evaporation of zinc (Zn) powder in the presence of oxygen (O(2)) gas was systematically investigated. The high-density growth of ZnO nanorods with (0002...

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Detalles Bibliográficos
Autores principales: Rusli, Nurul Izni, Tanikawa, Masahiro, Mahmood, Mohamad Rusop, Yasui, Kanji, Hashim, Abdul Manaf
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2012
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5449056/
http://dx.doi.org/10.3390/ma5122817

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5449056/
http://dx.doi.org/10.3390/ma5122817

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