Role of SiN(x) Barrier Layer on the Performances of Polyimide Ga(2)O(3)-doped ZnO p-i-n Hydrogenated Amorphous Silicon Thin Film Solar Cells

In this study, silicon nitride (SiN(x)) thin films were deposited on polyimide (PI) substrates as barrier layers by a plasma enhanced chemical vapor deposition (PECVD) system. The gallium-doped zinc oxide (GZO) thin films were deposited on PI and SiN(x)/PI substrates at room temperature (RT), 100 an...

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Detalles Bibliográficos
Autores principales: Wang, Fang-Hsing, Kuo, Hsin-Hui, Yang, Cheng-Fu, Liu, Min-Chu
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2014
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5453070/
https://www.ncbi.nlm.nih.gov/pubmed/28788494
http://dx.doi.org/10.3390/ma7020948

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5453070/
https://www.ncbi.nlm.nih.gov/pubmed/28788494
http://dx.doi.org/10.3390/ma7020948

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