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Role of SiN(x) Barrier Layer on the Performances of Polyimide Ga(2)O(3)-doped ZnO p-i-n Hydrogenated Amorphous Silicon Thin Film Solar Cells
In this study, silicon nitride (SiN(x)) thin films were deposited on polyimide (PI) substrates as barrier layers by a plasma enhanced chemical vapor deposition (PECVD) system. The gallium-doped zinc oxide (GZO) thin films were deposited on PI and SiN(x)/PI substrates at room temperature (RT), 100 an...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2014
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5453070/ https://www.ncbi.nlm.nih.gov/pubmed/28788494 http://dx.doi.org/10.3390/ma7020948 |