Effect of Sample Elevation in Radio Frequency Plasma Enhanced Chemical Vapor Deposition (RF PECVD) Reactor on Optical Properties and Deposition Rate of Silicon Nitride Thin Films

In this paper we investigate influence of radio frequency plasma enhanced chemical vapor deposition (RF PECVD) process parameters, which include gas flows, pressure and temperature, as well as a way of sample placement in the reactor, on optical properties and deposition rate of silicon nitride (SiN...

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Detalles Bibliográficos
Autores principales: Œmietana, Mateusz, Mroczyński, Robert, Kwietniewski, Norbert
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2014
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5453107/
https://www.ncbi.nlm.nih.gov/pubmed/28788512
http://dx.doi.org/10.3390/ma7021249

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5453107/
https://www.ncbi.nlm.nih.gov/pubmed/28788512
http://dx.doi.org/10.3390/ma7021249

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