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Smooth anti-reflective three-dimensional textures for liquid phase crystallized silicon thin-film solar cells on glass

Recently, liquid phase crystallization of thin silicon films has emerged as a candidate for thin-film photovoltaics. On 10 μm thin absorbers, wafer-equivalent morphologies and open-circuit voltages were reached, leading to 13.2% record efficiency. However, short-circuit current densities are still l...

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Detalles Bibliográficos
Autores principales: Eisenhauer, David, Köppel, Grit, Jäger, Klaus, Chen, Duote, Shargaieva, Oleksandra, Sonntag, Paul, Amkreutz, Daniel, Rech, Bernd, Becker, Christiane
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5453928/
https://www.ncbi.nlm.nih.gov/pubmed/28572669
http://dx.doi.org/10.1038/s41598-017-02874-y
Descripción
Sumario:Recently, liquid phase crystallization of thin silicon films has emerged as a candidate for thin-film photovoltaics. On 10 μm thin absorbers, wafer-equivalent morphologies and open-circuit voltages were reached, leading to 13.2% record efficiency. However, short-circuit current densities are still limited, mainly due to optical losses at the glass-silicon interface. While nano-structures at this interface have been shown to efficiently reduce reflection, up to now these textures caused a deterioration of electronic silicon material quality. Therefore, optical gains were mitigated due to recombination losses. Here, the SMooth Anti-Reflective Three-dimensional (SMART) texture is introduced to overcome this trade-off. By smoothing nanoimprinted SiO(x) nano-pillar arrays with spin-coated TiO(x) layers, light in-coupling into laser-crystallized silicon solar cells is significantly improved as successfully demonstrated in three-dimensional simulations and in experiment. At the same time, electronic silicon material quality is equivalent to that of planar references, allowing to reach V (oc) values above 630 mV. Furthermore, the short-circuit current density could be increased from 21.0 mA cm(−2) for planar reference cells to 24.5 mA cm(−2) on SMART textures, a relative increase of 18%. External quantum efficiency measurements yield an increase for wavelengths up to 700 nm compared to a state-of-the-art solar cell with 11.9% efficiency, corresponding to a j(sc, EQE) gain of 2.8 mA cm(−2).