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Electrically driven deep ultraviolet MgZnO lasers at room temperature
Semiconductor lasers in the deep ultraviolet (UV) range have numerous potential applications ranging from water purification and medical diagnosis to high-density data storage and flexible displays. Nevertheless, very little success was achieved in the realization of electrically driven deep UV semi...
Autores principales: | , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2017
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5453953/ https://www.ncbi.nlm.nih.gov/pubmed/28572587 http://dx.doi.org/10.1038/s41598-017-02791-0 |
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author | Suja, Mohammad Bashar, Sunayna Binte Debnath, Bishwajit Su, Longxing Shi, Wenhao Lake, Roger Liu, Jianlin |
author_facet | Suja, Mohammad Bashar, Sunayna Binte Debnath, Bishwajit Su, Longxing Shi, Wenhao Lake, Roger Liu, Jianlin |
author_sort | Suja, Mohammad |
collection | PubMed |
description | Semiconductor lasers in the deep ultraviolet (UV) range have numerous potential applications ranging from water purification and medical diagnosis to high-density data storage and flexible displays. Nevertheless, very little success was achieved in the realization of electrically driven deep UV semiconductor lasers to date. In this paper, we report the fabrication and characterization of deep UV MgZnO semiconductor lasers. These lasers are operated with continuous current mode at room temperature and the shortest wavelength reaches 284 nm. The wide bandgap MgZnO thin films with various Mg mole fractions were grown on c-sapphire substrate using radio-frequency plasma assisted molecular beam epitaxy. Metal-semiconductor-metal (MSM) random laser devices were fabricated using lithography and metallization processes. Besides the demonstration of scalable emission wavelength, very low threshold current densities of 29~33 A/cm(2) are achieved. Numerical modeling reveals that impact ionization process is responsible for the generation of hole carriers in the MgZnO MSM devices. The interaction of electrons and holes leads to radiative excitonic recombination and subsequent coherent random lasing. |
format | Online Article Text |
id | pubmed-5453953 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2017 |
publisher | Nature Publishing Group UK |
record_format | MEDLINE/PubMed |
spelling | pubmed-54539532017-06-02 Electrically driven deep ultraviolet MgZnO lasers at room temperature Suja, Mohammad Bashar, Sunayna Binte Debnath, Bishwajit Su, Longxing Shi, Wenhao Lake, Roger Liu, Jianlin Sci Rep Article Semiconductor lasers in the deep ultraviolet (UV) range have numerous potential applications ranging from water purification and medical diagnosis to high-density data storage and flexible displays. Nevertheless, very little success was achieved in the realization of electrically driven deep UV semiconductor lasers to date. In this paper, we report the fabrication and characterization of deep UV MgZnO semiconductor lasers. These lasers are operated with continuous current mode at room temperature and the shortest wavelength reaches 284 nm. The wide bandgap MgZnO thin films with various Mg mole fractions were grown on c-sapphire substrate using radio-frequency plasma assisted molecular beam epitaxy. Metal-semiconductor-metal (MSM) random laser devices were fabricated using lithography and metallization processes. Besides the demonstration of scalable emission wavelength, very low threshold current densities of 29~33 A/cm(2) are achieved. Numerical modeling reveals that impact ionization process is responsible for the generation of hole carriers in the MgZnO MSM devices. The interaction of electrons and holes leads to radiative excitonic recombination and subsequent coherent random lasing. Nature Publishing Group UK 2017-06-01 /pmc/articles/PMC5453953/ /pubmed/28572587 http://dx.doi.org/10.1038/s41598-017-02791-0 Text en © The Author(s) 2017 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/. |
spellingShingle | Article Suja, Mohammad Bashar, Sunayna Binte Debnath, Bishwajit Su, Longxing Shi, Wenhao Lake, Roger Liu, Jianlin Electrically driven deep ultraviolet MgZnO lasers at room temperature |
title | Electrically driven deep ultraviolet MgZnO lasers at room temperature |
title_full | Electrically driven deep ultraviolet MgZnO lasers at room temperature |
title_fullStr | Electrically driven deep ultraviolet MgZnO lasers at room temperature |
title_full_unstemmed | Electrically driven deep ultraviolet MgZnO lasers at room temperature |
title_short | Electrically driven deep ultraviolet MgZnO lasers at room temperature |
title_sort | electrically driven deep ultraviolet mgzno lasers at room temperature |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5453953/ https://www.ncbi.nlm.nih.gov/pubmed/28572587 http://dx.doi.org/10.1038/s41598-017-02791-0 |
work_keys_str_mv | AT sujamohammad electricallydrivendeepultravioletmgznolasersatroomtemperature AT basharsunaynabinte electricallydrivendeepultravioletmgznolasersatroomtemperature AT debnathbishwajit electricallydrivendeepultravioletmgznolasersatroomtemperature AT sulongxing electricallydrivendeepultravioletmgznolasersatroomtemperature AT shiwenhao electricallydrivendeepultravioletmgznolasersatroomtemperature AT lakeroger electricallydrivendeepultravioletmgznolasersatroomtemperature AT liujianlin electricallydrivendeepultravioletmgznolasersatroomtemperature |