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In Situ Hall Effect Monitoring of Vacuum Annealing of In(2)O(3):H Thin Films

Hydrogen doped In(2)O(3) thin films were prepared by room temperature sputter deposition with the addition of H(2)O to the sputter gas. By subsequent vacuum annealing, the films obtain high mobility up to 90 cm(2)/Vs. The films were analyzed in situ by X-ray photoelectron spectroscopy (XPS) and ex s...

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Detalles Bibliográficos
Autores principales:	Wardenga, Hans F., Frischbier, Mareike V., Morales-Masis, Monica, Klein, Andreas
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2015
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5455274/ https://www.ncbi.nlm.nih.gov/pubmed/28787957 http://dx.doi.org/10.3390/ma8020561

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