Effects of Electrodes on the Switching Behavior of Strontium Titanate Nickelate Resistive Random Access Memory

Strontium titanate nickelate (STN) thin films on indium tin oxide (ITO)/glass substrate were synthesized using the sol-gel method for resistive random access memory (RRAM) applications. Aluminum (Al), titanium (Ti), tungsten (W), gold (Au) and platinum (Pt) were used as top electrodes in the STN-bas...

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Detalles Bibliográficos
Autores principales: Lee, Ke-Jing, Wang, Li-Wen, Chiang, Te-Kung, Wang, Yeong-Her
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5455395/
https://www.ncbi.nlm.nih.gov/pubmed/28793630
http://dx.doi.org/10.3390/ma8105374

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5455395/
https://www.ncbi.nlm.nih.gov/pubmed/28793630
http://dx.doi.org/10.3390/ma8105374

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