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Effects of Electrodes on the Switching Behavior of Strontium Titanate Nickelate Resistive Random Access Memory
Strontium titanate nickelate (STN) thin films on indium tin oxide (ITO)/glass substrate were synthesized using the sol-gel method for resistive random access memory (RRAM) applications. Aluminum (Al), titanium (Ti), tungsten (W), gold (Au) and platinum (Pt) were used as top electrodes in the STN-bas...
Autores principales: | Lee, Ke-Jing, Wang, Li-Wen, Chiang, Te-Kung, Wang, Yeong-Her |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2015
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5455395/ https://www.ncbi.nlm.nih.gov/pubmed/28793630 http://dx.doi.org/10.3390/ma8105374 |
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