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Reduction Expansion Synthesis as Strategy to Control Nitrogen Doping Level and Surface Area in Graphene

Graphene sheets doped with nitrogen were produced by the reduction-expansion (RES) method utilizing graphite oxide (GO) and urea as precursor materials. The simultaneous graphene generation and nitrogen insertion reactions are based on the fact that urea decomposes upon heating to release reducing g...

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Autores principales: Canty, Russell, Gonzalez, Edwin, MacDonald, Caleb, Osswald, Sebastian, Zea, Hugo, Luhrs, Claudia C.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2015
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5455405/
https://www.ncbi.nlm.nih.gov/pubmed/28793618
http://dx.doi.org/10.3390/ma8105359
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author Canty, Russell
Gonzalez, Edwin
MacDonald, Caleb
Osswald, Sebastian
Zea, Hugo
Luhrs, Claudia C.
author_facet Canty, Russell
Gonzalez, Edwin
MacDonald, Caleb
Osswald, Sebastian
Zea, Hugo
Luhrs, Claudia C.
author_sort Canty, Russell
collection PubMed
description Graphene sheets doped with nitrogen were produced by the reduction-expansion (RES) method utilizing graphite oxide (GO) and urea as precursor materials. The simultaneous graphene generation and nitrogen insertion reactions are based on the fact that urea decomposes upon heating to release reducing gases. The volatile byproducts perform two primary functions: (i) promoting the reduction of the GO and (ii) providing the nitrogen to be inserted in situ as the graphene structure is created. Samples with diverse urea/GO mass ratios were treated at 800 °C in inert atmosphere to generate graphene with diverse microstructural characteristics and levels of nitrogen doping. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were used to study the microstructural features of the products. The effects of doping on the samples structure and surface area were studied by X-ray diffraction (XRD), Raman Spectroscopy, and Brunauer Emmet Teller (BET). The GO and urea decomposition-reduction process as well as nitrogen-doped graphene stability were studied by thermogravimetric analysis (TGA) coupled with mass spectroscopy (MS) analysis of the evolved gases. Results show that the proposed method offers a high level of control over the amount of nitrogen inserted in the graphene and may be used alternatively to control its surface area. To demonstrate the practical relevance of these findings, as-produced samples were used as electrodes in supercapacitor and battery devices and compared with conventional, thermally exfoliated graphene.
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spelling pubmed-54554052017-07-28 Reduction Expansion Synthesis as Strategy to Control Nitrogen Doping Level and Surface Area in Graphene Canty, Russell Gonzalez, Edwin MacDonald, Caleb Osswald, Sebastian Zea, Hugo Luhrs, Claudia C. Materials (Basel) Article Graphene sheets doped with nitrogen were produced by the reduction-expansion (RES) method utilizing graphite oxide (GO) and urea as precursor materials. The simultaneous graphene generation and nitrogen insertion reactions are based on the fact that urea decomposes upon heating to release reducing gases. The volatile byproducts perform two primary functions: (i) promoting the reduction of the GO and (ii) providing the nitrogen to be inserted in situ as the graphene structure is created. Samples with diverse urea/GO mass ratios were treated at 800 °C in inert atmosphere to generate graphene with diverse microstructural characteristics and levels of nitrogen doping. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were used to study the microstructural features of the products. The effects of doping on the samples structure and surface area were studied by X-ray diffraction (XRD), Raman Spectroscopy, and Brunauer Emmet Teller (BET). The GO and urea decomposition-reduction process as well as nitrogen-doped graphene stability were studied by thermogravimetric analysis (TGA) coupled with mass spectroscopy (MS) analysis of the evolved gases. Results show that the proposed method offers a high level of control over the amount of nitrogen inserted in the graphene and may be used alternatively to control its surface area. To demonstrate the practical relevance of these findings, as-produced samples were used as electrodes in supercapacitor and battery devices and compared with conventional, thermally exfoliated graphene. MDPI 2015-10-16 /pmc/articles/PMC5455405/ /pubmed/28793618 http://dx.doi.org/10.3390/ma8105359 Text en © 2015 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Canty, Russell
Gonzalez, Edwin
MacDonald, Caleb
Osswald, Sebastian
Zea, Hugo
Luhrs, Claudia C.
Reduction Expansion Synthesis as Strategy to Control Nitrogen Doping Level and Surface Area in Graphene
title Reduction Expansion Synthesis as Strategy to Control Nitrogen Doping Level and Surface Area in Graphene
title_full Reduction Expansion Synthesis as Strategy to Control Nitrogen Doping Level and Surface Area in Graphene
title_fullStr Reduction Expansion Synthesis as Strategy to Control Nitrogen Doping Level and Surface Area in Graphene
title_full_unstemmed Reduction Expansion Synthesis as Strategy to Control Nitrogen Doping Level and Surface Area in Graphene
title_short Reduction Expansion Synthesis as Strategy to Control Nitrogen Doping Level and Surface Area in Graphene
title_sort reduction expansion synthesis as strategy to control nitrogen doping level and surface area in graphene
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5455405/
https://www.ncbi.nlm.nih.gov/pubmed/28793618
http://dx.doi.org/10.3390/ma8105359
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