Capacitive Behavior of Single Gallium Oxide Nanobelt

In this research, monocrystalline gallium oxide (Ga(2)O(3)) nanobelts were synthesized through oxidation of metal gallium at high temperature. An electronic device, based on an individual Ga(2)O(3) nanobelt on Pt interdigital electrodes (IDEs), was fabricated to investigate the electrical characteri...

Descripción completa

Detalles Bibliográficos
Autores principales: Cai, Haitao, Liu, Hang, Zhu, Huichao, Shao, Pai, Hou, Changmin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5455499/
https://www.ncbi.nlm.nih.gov/pubmed/28793506
http://dx.doi.org/10.3390/ma8085244
Descripción
Sumario:In this research, monocrystalline gallium oxide (Ga(2)O(3)) nanobelts were synthesized through oxidation of metal gallium at high temperature. An electronic device, based on an individual Ga(2)O(3) nanobelt on Pt interdigital electrodes (IDEs), was fabricated to investigate the electrical characteristics of the Ga(2)O(3) nanobelt in a dry atmosphere at room temperature. The current-voltage (I-V) and I/V-t characteristics show the capacitive behavior of the Ga(2)O(3) nanobelt, indicating the existence of capacitive elements in the Pt/Ga(2)O(3)/Pt structure.

Ejemplares similares